Temperature dependence of the band gap of ZnSe{sub 1-x}O{sub x}

We have studied the temperature dependence of the band gap of molecular-beam-epitaxy-grown ZnSe{sub 1-x}O{sub x} films (x=0-0.021) using photoluminescence spectroscopy from 15 to 280 K. The temperature dependence of the band gap decreases with increasing oxygen concentration, which can be quantitati...

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Veröffentlicht in:	Applied physics letters 2009-10, Vol.95 (15)
Hauptverfasser:	Broesler, R., Haller, E. E., Department of Materials Science and Engineering, University of California, Berkeley, California 94720, Walukiewicz, W., Muranaka, T., Matsumoto, T., Nabetani, Y.
Format:	Artikel
Sprache:	eng
Schlagworte:	CRYSTAL GROWTH ENERGY GAP MATERIALS SCIENCE MOLECULAR BEAM EPITAXY OXYGEN PHOTOLUMINESCENCE SEMICONDUCTOR MATERIALS SPECTROSCOPY TEMPERATURE DEPENDENCE THIN FILMS ZINC OXIDES ZINC SELENIDES
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