Temperature dependence of the band gap of ZnSe{sub 1-x}O{sub x}

Temperature dependence of the band gap of ZnSe{sub 1-x}O{sub x}

We have studied the temperature dependence of the band gap of molecular-beam-epitaxy-grown ZnSe{sub 1-x}O{sub x} films (x=0-0.021) using photoluminescence spectroscopy from 15 to 280 K. The temperature dependence of the band gap decreases with increasing oxygen concentration, which can be quantitati...

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Veröffentlicht in:Applied physics letters 2009-10, Vol.95 (15)
Hauptverfasser: Broesler, R., Haller, E. E., Department of Materials Science and Engineering, University of California, Berkeley, California 94720, Walukiewicz, W., Muranaka, T., Matsumoto, T., Nabetani, Y.
Format: Artikel
Sprache:eng
Schlagworte:
CRYSTAL GROWTH
ENERGY GAP
MATERIALS SCIENCE
MOLECULAR BEAM EPITAXY
OXYGEN
PHOTOLUMINESCENCE
SEMICONDUCTOR MATERIALS
SPECTROSCOPY
TEMPERATURE DEPENDENCE
THIN FILMS
ZINC OXIDES
ZINC SELENIDES
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Zusammenfassung:We have studied the temperature dependence of the band gap of molecular-beam-epitaxy-grown ZnSe{sub 1-x}O{sub x} films (x=0-0.021) using photoluminescence spectroscopy from 15 to 280 K. The temperature dependence of the band gap decreases with increasing oxygen concentration, which can be quantitatively explained by an anticrossing interaction between the highly localized oxygen defect states and the extended states of the conduction band.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.3242026