Temperature dependence of the band gap of ZnSe{sub 1-x}O{sub x}
We have studied the temperature dependence of the band gap of molecular-beam-epitaxy-grown ZnSe{sub 1-x}O{sub x} films (x=0-0.021) using photoluminescence spectroscopy from 15 to 280 K. The temperature dependence of the band gap decreases with increasing oxygen concentration, which can be quantitati...
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| Veröffentlicht in: | Applied physics letters 2009-10, Vol.95 (15) |
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| container_title | Applied physics letters |
| container_volume | 95 |
| creator | Broesler, R. Haller, E. E. Department of Materials Science and Engineering, University of California, Berkeley, California 94720 Walukiewicz, W. Muranaka, T. Matsumoto, T. Nabetani, Y. |
| description | We have studied the temperature dependence of the band gap of molecular-beam-epitaxy-grown ZnSe{sub 1-x}O{sub x} films (x=0-0.021) using photoluminescence spectroscopy from 15 to 280 K. The temperature dependence of the band gap decreases with increasing oxygen concentration, which can be quantitatively explained by an anticrossing interaction between the highly localized oxygen defect states and the extended states of the conduction band. |
| doi_str_mv | 10.1063/1.3242026 |
| format | Article |
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E. ; Department of Materials Science and Engineering, University of California, Berkeley, California 94720 ; Walukiewicz, W. ; Muranaka, T. ; Matsumoto, T. ; Nabetani, Y.</creator><creatorcontrib>Broesler, R. ; Haller, E. E. ; Department of Materials Science and Engineering, University of California, Berkeley, California 94720 ; Walukiewicz, W. ; Muranaka, T. ; Matsumoto, T. ; Nabetani, Y.</creatorcontrib><description>We have studied the temperature dependence of the band gap of molecular-beam-epitaxy-grown ZnSe{sub 1-x}O{sub x} films (x=0-0.021) using photoluminescence spectroscopy from 15 to 280 K. 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E.</creatorcontrib><creatorcontrib>Department of Materials Science and Engineering, University of California, Berkeley, California 94720</creatorcontrib><creatorcontrib>Walukiewicz, W.</creatorcontrib><creatorcontrib>Muranaka, T.</creatorcontrib><creatorcontrib>Matsumoto, T.</creatorcontrib><creatorcontrib>Nabetani, Y.</creatorcontrib><title>Temperature dependence of the band gap of ZnSe{sub 1-x}O{sub x}</title><title>Applied physics letters</title><description>We have studied the temperature dependence of the band gap of molecular-beam-epitaxy-grown ZnSe{sub 1-x}O{sub x} films (x=0-0.021) using photoluminescence spectroscopy from 15 to 280 K. The temperature dependence of the band gap decreases with increasing oxygen concentration, which can be quantitatively explained by an anticrossing interaction between the highly localized oxygen defect states and the extended states of the conduction band.</description><subject>CRYSTAL GROWTH</subject><subject>ENERGY GAP</subject><subject>MATERIALS SCIENCE</subject><subject>MOLECULAR BEAM EPITAXY</subject><subject>OXYGEN</subject><subject>PHOTOLUMINESCENCE</subject><subject>SEMICONDUCTOR MATERIALS</subject><subject>SPECTROSCOPY</subject><subject>TEMPERATURE DEPENDENCE</subject><subject>THIN FILMS</subject><subject>ZINC OXIDES</subject><subject>ZINC SELENIDES</subject><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2009</creationdate><recordtype>article</recordtype><recordid>eNqNirsKwjAUQIMoWB-DfxBwruYmfdjJQRQ3Bzu5lDS9tRVNS5NCQfrvPvADnM45cAhZAFsBC8QaVoJ7nPFgQBxgYegKgM2QOIwx4QaRD2MyMeb2Tp8L4ZBtjI8aG2nbBmmGNeoMtUJa5dQWSFOpM3qV9acv-oxP06YU3K4_fa3rZ2SUy7vB-Y9Tsjzs493RrYwtE6NKi6pQldaobMKBR54IQPx3vQBbnz0Q</recordid><startdate>20091012</startdate><enddate>20091012</enddate><creator>Broesler, R.</creator><creator>Haller, E. 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E.</creatorcontrib><creatorcontrib>Department of Materials Science and Engineering, University of California, Berkeley, California 94720</creatorcontrib><creatorcontrib>Walukiewicz, W.</creatorcontrib><creatorcontrib>Muranaka, T.</creatorcontrib><creatorcontrib>Matsumoto, T.</creatorcontrib><creatorcontrib>Nabetani, Y.</creatorcontrib><collection>OSTI.GOV</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Broesler, R.</au><au>Haller, E. E.</au><au>Department of Materials Science and Engineering, University of California, Berkeley, California 94720</au><au>Walukiewicz, W.</au><au>Muranaka, T.</au><au>Matsumoto, T.</au><au>Nabetani, Y.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Temperature dependence of the band gap of ZnSe{sub 1-x}O{sub x}</atitle><jtitle>Applied physics letters</jtitle><date>2009-10-12</date><risdate>2009</risdate><volume>95</volume><issue>15</issue><issn>0003-6951</issn><eissn>1077-3118</eissn><abstract>We have studied the temperature dependence of the band gap of molecular-beam-epitaxy-grown ZnSe{sub 1-x}O{sub x} films (x=0-0.021) using photoluminescence spectroscopy from 15 to 280 K. The temperature dependence of the band gap decreases with increasing oxygen concentration, which can be quantitatively explained by an anticrossing interaction between the highly localized oxygen defect states and the extended states of the conduction band.</abstract><cop>United States</cop><doi>10.1063/1.3242026</doi></addata></record> |
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| identifier | ISSN: 0003-6951 |
| ispartof | Applied physics letters, 2009-10, Vol.95 (15) |
| issn | 0003-6951 1077-3118 |
| language | eng |
| recordid | cdi_osti_scitechconnect_21294361 |
| source | AIP Journals Complete; AIP Digital Archive; Alma/SFX Local Collection |
| subjects | CRYSTAL GROWTH ENERGY GAP MATERIALS SCIENCE MOLECULAR BEAM EPITAXY OXYGEN PHOTOLUMINESCENCE SEMICONDUCTOR MATERIALS SPECTROSCOPY TEMPERATURE DEPENDENCE THIN FILMS ZINC OXIDES ZINC SELENIDES |
| title | Temperature dependence of the band gap of ZnSe{sub 1-x}O{sub x} |
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