Specific features of the epitaxial growth of narrow-gap InSb quantum dots on an InAs substrate

Specific features of the epitaxial growth of narrow-gap InSb quantum dots on an InAs substrate

Arrays of coherent InSb quantum dots (QDs) have been fabricated by liquid-phase epitaxy on InAs substrates in the temperature range T = 420–450°C. The QDs with a density of (0.9−2) × 10 10 cm −2 were 3 nm high and 13 nm in diameter. A bimodal QD size distribution was observed, which was accounted fo...

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Veröffentlicht in:Semiconductors (Woodbury, N.Y.) N.Y.), 2009-08, Vol.43 (8), p.1102-1109
Hauptverfasser: Moiseev, K. D., Parkhomenko, Ya. A., Gushchina, E. V., Ankudinov, A. V., Mikhailova, V. P., Bert, N. A., Yakovlev, Yu. P.
Format: Artikel
Sprache:eng
Schlagworte:
39
ARSENIC
Fabrication
INDIUM ANTIMONIDES
INDIUM ARSENIDES
LIQUID PHASE EPITAXY
Magnetic Materials
Magnetism
Physics
Physics and Astronomy
QUANTUM DOTS
SURFACES
TEMPERATURE RANGE 0400-1000 K
Testing of Materials and Structures
TRANSMISSION ELECTRON MICROSCOPY
Treatment
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Zusammenfassung:Arrays of coherent InSb quantum dots (QDs) have been fabricated by liquid-phase epitaxy on InAs substrates in the temperature range T = 420–450°C. The QDs with a density of (0.9−2) × 10 10 cm −2 were 3 nm high and 13 nm in diameter. A bimodal QD size distribution was observed, which was accounted for by a combined growth mechanism of these nanoobjects. Structural characteristics of a separate InSb QD formed on the InAs surface were studied for the first time by atomic-force and transmission electron microscopies. Moire fringes were observed for the first time for QDs in the InSb/InAs system, with the moire period of 3.5 nm corresponding to InSb QDs without an admixture of arsenic.
ISSN:1063-7826
1090-6479
DOI:10.1134/S1063782609080259