Implant Angle Monitor System of MC3-II

Precise implant angle control is required for the latest generation of ion implanters to meet further shrink semiconductor device requirements. Especially, the highest angle accuracy is required for Halo implant process of Logic devices. The Halo implant angle affects the device performance, because slight differences of beam divergence change the overlap profile towards the extension. Additionally, twist angle accuracy is demanded in case of channeling angle implant. Therefore monitoring beam angles and wafer twist angles is important. A new monitoring system for the MC3-II, SEN Corp.'s single wafer type medium current implanter has been developed. This paper describes the angle control performance and monitoring system of the MC3-II. For the twist angle control, we developed a wafer notch angle monitor. The system monitors the wafer notch image on the platen. And the notch angle variation is calculated by using image processing method. It is also able to adjust the notch angle according to the angle error. For the tilt angle control, we developed a vertical beam profile monitor. The monitor system can detect beam profile of vertical directions with horizontally scanning beam. It also measures beam angles of a tilt direction to a wafer. The system configuration and sample beam data are presented.