Introduction of the SHX-III System, a Single-Wafer High-Current Ion Implanter

The SHX-III system, categorized as a single-wafer high-current ion implanter, has been developed by SEN Corporation in order to meet all the requirements for high dose and relatively high mid-dose applications, including high-tilted multi-step implantation. Recently the three major advanced device types, namely logic devices, memory and imagers, started to require high-current ion implanters in diverse ways. The SHX-III is designed to fulfill such a variety of requirements in one system. The SHX-III has the same end station as the MC3-II/WR, SEN's latest medium current implanter, which has a mechanical throughput of 450 WPH. This capability and precise dose control system of the SHX-III causes dramatic productivity enhancement for application of mid-high dose, ranged between 5E13 to 2E14 atoms/cm2, usually performed by medium current ion implanters. In this paper the concept and performance of the SHX-III will be described, concerning influence of device characteristics. A concept and performance data of the SHX figure that this system can provide implant quality and productivity as far as the 32 nm node.