Ion beam mixing of metal/fluoropolymer interfaces

Ion beam mixing of metals and polymers with very low dielectric constants such as Teflon can provide many applications in the area of electronic materials. This work is a study of the 'mixing' effect of 50 keV nitrogen implanted thin metal layers on Teflon PTFE (polytetrafluoroethylene) substrates. RBS analysis shows that the distribution of thin layers of copper and chromium (approximately 300-400 A thick) through the implant layer of the Teflon depends on the reactivity of the metal. As the implant fluence is increased, the distribution of metal atoms in the polymer matrix becomes concentrated over smaller ranges near the bottom of the implant layer. In situ RGA analysis during the implantation shows the liberation of an abundance of fluorine in many different forms. This is supported by results from a NRA experiment that shows the non-uniform concentration profile of fluorine throughout the implant layer. During the implantation process, the fluorine is released through the incident ion track leaving a carbon and metal rich region near the surface of the implant layer. The fluorine density increases with depth through the implant layer making a smooth transition to the undamaged bulk Teflon below. Low dielectric materials with highly conductive surfaces, such as this one, may provide an opportunity for a broad range of new microelectronic applications.