Ion beam induced charge collection (IBICC) from integrated circuit test structures using a 10 MeV carbon microbeam
As feature sizes of Integrated Circuits (ICs) continue to shrink, the sensitivity of these devices, particularly SRAMs and DRAMs, to natural radiation is increasing. In this paper, the Ion Beam Induced Charge Collection (IBICC) technique is utilized to simulate neutron-induced Si recoil effects in I...
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| Veröffentlicht in: | AIP conference proceedings 1999-06, Vol.475 (1) |
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| creator | Guo, B. N. El Bouanani, M. Duggan, J. L. McDaniel, F. D. Renfrow, S. N. Ion Beam Materials Research Laboratory, Sandia National Laboratories, MS 1056, PO Box 5800, Albuquerque, New Mexico 87185 Doyle, B. L. Walsh, D. S. Aton, T. J. |
| description | As feature sizes of Integrated Circuits (ICs) continue to shrink, the sensitivity of these devices, particularly SRAMs and DRAMs, to natural radiation is increasing. In this paper, the Ion Beam Induced Charge Collection (IBICC) technique is utilized to simulate neutron-induced Si recoil effects in ICs. The IBICC measurements, conducted at the Sandia National Laboratories, employed a 10 MeV carbon microbeam with 1{mu}m diameter spot to scan test structures on specifically designed ICs. With the aid of IC layout information, an analysis of the charge collection efficiency from different test areas is presented. |
| doi_str_mv | 10.1063/1.59108 |
| format | Article |
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The IBICC measurements, conducted at the Sandia National Laboratories, employed a 10 MeV carbon microbeam with 1{mu}m diameter spot to scan test structures on specifically designed ICs. 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N.</creatorcontrib><creatorcontrib>El Bouanani, M.</creatorcontrib><creatorcontrib>Duggan, J. L.</creatorcontrib><creatorcontrib>McDaniel, F. D.</creatorcontrib><creatorcontrib>Renfrow, S. N.</creatorcontrib><creatorcontrib>Ion Beam Materials Research Laboratory, Sandia National Laboratories, MS 1056, PO Box 5800, Albuquerque, New Mexico 87185</creatorcontrib><creatorcontrib>Doyle, B. L.</creatorcontrib><creatorcontrib>Walsh, D. S.</creatorcontrib><creatorcontrib>Aton, T. J.</creatorcontrib><title>Ion beam induced charge collection (IBICC) from integrated circuit test structures using a 10 MeV carbon microbeam</title><title>AIP conference proceedings</title><description>As feature sizes of Integrated Circuits (ICs) continue to shrink, the sensitivity of these devices, particularly SRAMs and DRAMs, to natural radiation is increasing. In this paper, the Ion Beam Induced Charge Collection (IBICC) technique is utilized to simulate neutron-induced Si recoil effects in ICs. The IBICC measurements, conducted at the Sandia National Laboratories, employed a 10 MeV carbon microbeam with 1{mu}m diameter spot to scan test structures on specifically designed ICs. With the aid of IC layout information, an analysis of the charge collection efficiency from different test areas is presented.</description><subject>CARBON IONS</subject><subject>CHARGE COLLECTION</subject><subject>CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY</subject><subject>FIELD EFFECT TRANSISTORS</subject><subject>INTEGRATED CIRCUITS</subject><subject>ION BEAMS</subject><subject>IRRADIATION</subject><subject>MEV RANGE</subject><subject>NEUTRON FLUENCE</subject><subject>PHYSICAL RADIATION EFFECTS</subject><subject>RECOILS</subject><subject>SANDIA NATIONAL LABORATORIES</subject><subject>SENSITIVITY</subject><subject>SILICON</subject><issn>0094-243X</issn><issn>1551-7616</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1999</creationdate><recordtype>article</recordtype><recordid>eNotj01LxDAURYMoOI7iXwi40UXHvDRJm6UWPwojblTcDenr60xkpoEk_f920NVd3MO5XMauQaxAmPIeVtqCqE_YArSGojJgTtlCCKsKqcrvc3aR0o8Q0lZVvWCxDSPvyB24H_sJqee4c3FLHMN-T5j9XN-2j23T3PEhhiOWaRtdPpI-4uQzz5QyTzlOmKdIiU_Jj1vuOAj-Rl8cXexmy8FjDMelS3Y2uH2iq_9css_np4_mtVi_v7TNw7oIoEwuAJxGK4QGY500pI2rlK77TltFuqpt2WvXOzVYbbtaGjSDHRTQjIqh7FS5ZDd_3pCy3yT0mXCHYRznWxsJUmitZPkLaCpaFQ</recordid><startdate>19990610</startdate><enddate>19990610</enddate><creator>Guo, B. 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J.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Ion beam induced charge collection (IBICC) from integrated circuit test structures using a 10 MeV carbon microbeam</atitle><jtitle>AIP conference proceedings</jtitle><date>1999-06-10</date><risdate>1999</risdate><volume>475</volume><issue>1</issue><issn>0094-243X</issn><eissn>1551-7616</eissn><abstract>As feature sizes of Integrated Circuits (ICs) continue to shrink, the sensitivity of these devices, particularly SRAMs and DRAMs, to natural radiation is increasing. In this paper, the Ion Beam Induced Charge Collection (IBICC) technique is utilized to simulate neutron-induced Si recoil effects in ICs. The IBICC measurements, conducted at the Sandia National Laboratories, employed a 10 MeV carbon microbeam with 1{mu}m diameter spot to scan test structures on specifically designed ICs. 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| fulltext | fulltext |
| identifier | ISSN: 0094-243X |
| ispartof | AIP conference proceedings, 1999-06, Vol.475 (1) |
| issn | 0094-243X 1551-7616 |
| language | eng |
| recordid | cdi_osti_scitechconnect_21205542 |
| source | AIP Journals Complete |
| subjects | CARBON IONS CHARGE COLLECTION CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY FIELD EFFECT TRANSISTORS INTEGRATED CIRCUITS ION BEAMS IRRADIATION MEV RANGE NEUTRON FLUENCE PHYSICAL RADIATION EFFECTS RECOILS SANDIA NATIONAL LABORATORIES SENSITIVITY SILICON |
| title | Ion beam induced charge collection (IBICC) from integrated circuit test structures using a 10 MeV carbon microbeam |
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