Ion beam induced charge collection (IBICC) from integrated circuit test structures using a 10 MeV carbon microbeam

As feature sizes of Integrated Circuits (ICs) continue to shrink, the sensitivity of these devices, particularly SRAMs and DRAMs, to natural radiation is increasing. In this paper, the Ion Beam Induced Charge Collection (IBICC) technique is utilized to simulate neutron-induced Si recoil effects in ICs. The IBICC measurements, conducted at the Sandia National Laboratories, employed a 10 MeV carbon microbeam with 1{mu}m diameter spot to scan test structures on specifically designed ICs. With the aid of IC layout information, an analysis of the charge collection efficiency from different test areas is presented.