Quantum resistance metrology in graphene

We performed a metrological characterization of the quantum Hall resistance in a 1   μ m wide graphene Hall bar. The longitudinal resistivity in the center of the ν = ± 2 quantum Hall plateaus vanishes within the measurement noise of 20   m Ω up to 2   μ A . Our results show that the quantization of...

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Veröffentlicht in:Applied physics letters 2008-12, Vol.93 (22), p.222109-222109-3
Hauptverfasser: Giesbers, A. J. M., Rietveld, G., Houtzager, E., Zeitler, U., Yang, R., Novoselov, K. S., Geim, A. K., Maan, J. C.
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Sprache:eng
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Zusammenfassung:We performed a metrological characterization of the quantum Hall resistance in a 1   μ m wide graphene Hall bar. The longitudinal resistivity in the center of the ν = ± 2 quantum Hall plateaus vanishes within the measurement noise of 20   m Ω up to 2   μ A . Our results show that the quantization of these plateaus is within the experimental uncertainty (15 ppm for 1.5   μ A current) equal to that in conventional semiconductors. The principal limitation of the present experiments is the relatively high contact resistances in the quantum Hall regime, leading to a significantly increased noise across the voltage contacts and a heating of the sample when a high current is applied.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.3043426