Quantum resistance metrology in graphene
We performed a metrological characterization of the quantum Hall resistance in a 1 μ m wide graphene Hall bar. The longitudinal resistivity in the center of the ν = ± 2 quantum Hall plateaus vanishes within the measurement noise of 20 m Ω up to 2 μ A . Our results show that the quantization of...
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Veröffentlicht in: | Applied physics letters 2008-12, Vol.93 (22), p.222109-222109-3 |
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Hauptverfasser: | , , , , , , , |
Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | We performed a metrological characterization of the quantum Hall resistance in a
1
μ
m
wide graphene Hall bar. The longitudinal resistivity in the center of the
ν
=
±
2
quantum Hall plateaus vanishes within the measurement noise of
20
m
Ω
up to
2
μ
A
. Our results show that the quantization of these plateaus is within the experimental uncertainty (15 ppm for
1.5
μ
A
current) equal to that in conventional semiconductors. The principal limitation of the present experiments is the relatively high contact resistances in the quantum Hall regime, leading to a significantly increased noise across the voltage contacts and a heating of the sample when a high current is applied. |
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ISSN: | 0003-6951 1077-3118 |
DOI: | 10.1063/1.3043426 |