In-plane band gap modulation investigated by secondary electron imaging of GaAsN/GaAsN:H heterostructures

In-plane band gap modulation investigated by secondary electron imaging of GaAsN/GaAsN:H heterostructures

GaAsN/GaAsN:H in-plane heterostructures have been investigated by secondary electron (SE) imaging in a field-emission scanning electron microscope. Adjacent GaAsN and GaAsN:H regions show a quite different SE image brightness due to the band gap energy difference between H-free and H-irradiated GaAs...

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Veröffentlicht in:Applied physics letters 2008-09, Vol.93 (10), p.102116-102116-3
Hauptverfasser: Felisari, L., Grillo, V., Martelli, F., Trotta, R., Polimeni, A., Capizzi, M., Jabeen, F., Mariucci, L.
Format: Artikel
Sprache:eng
Schlagworte:
BRIGHTNESS
DIFFUSION
ENERGY GAP
FIELD EMISSION
GALLIUM ARSENIDES
GALLIUM NITRIDES
HETEROJUNCTIONS
HYDROGEN
HYDROGENATION
ION MICROPROBE ANALYSIS
MASS SPECTRA
MASS SPECTROSCOPY
MATERIALS SCIENCE
SCANNING ELECTRON MICROSCOPY
SEMICONDUCTOR MATERIALS
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Zusammenfassung:GaAsN/GaAsN:H in-plane heterostructures have been investigated by secondary electron (SE) imaging in a field-emission scanning electron microscope. Adjacent GaAsN and GaAsN:H regions show a quite different SE image brightness due to the band gap energy difference between H-free and H-irradiated GaAsN. These findings provide a useful means to characterize the lateral diffusion of H and well support secondary ion mass spectroscopy results regarding the importance of a low hydrogenation temperature in order to obtain sharply defined in-plane heterostructures.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.2981689