Multiple substrate microwave plasma-assisted chemical vapor deposition single crystal diamond synthesis

A multiple substrate, microwave plasma-assisted chemical vapor deposition synthesis process for single crystal diamond (SCD) is demonstrated using a 915 MHz reactor. Diamond synthesis was performed using input chemistries of 6-8% of C H 4 ∕ H 2 , microwave input powers of 10 - 11.5 kW , substrate te...

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Veröffentlicht in:	Applied physics letters 2008-07, Vol.93 (3), p.031502-031502-3
Hauptverfasser:	Asmussen, J., Grotjohn, T. A., Schuelke, T., Becker, M. F., Yaran, M. K., King, D. J., Wicklein, S., Reinhard, D. K.
Format:	Artikel
Sprache:	eng
Schlagworte:	CHEMICAL VAPOR DEPOSITION CRYSTAL GROWTH DIAMONDS EPITAXY HYDROGEN LAYERS MATERIALS SCIENCE METHANE MHZ RANGE 100-1000 MICROWAVE RADIATION MONOCRYSTALS PLASMA SUBSTRATES SYNTHESIS
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