Multiple substrate microwave plasma-assisted chemical vapor deposition single crystal diamond synthesis
A multiple substrate, microwave plasma-assisted chemical vapor deposition synthesis process for single crystal diamond (SCD) is demonstrated using a 915 MHz reactor. Diamond synthesis was performed using input chemistries of 6-8% of C H 4 ∕ H 2 , microwave input powers of 10 - 11.5 kW , substrate te...
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| Veröffentlicht in: | Applied physics letters 2008-07, Vol.93 (3), p.031502-031502-3 |
|---|---|
| Hauptverfasser: | , , , , , , , |
| Format: | Artikel |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext |
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| Zusammenfassung: | A multiple substrate, microwave plasma-assisted chemical vapor deposition synthesis process for single crystal diamond (SCD) is demonstrated using a
915
MHz
reactor. Diamond synthesis was performed using input chemistries of 6-8% of
C
H
4
∕
H
2
, microwave input powers of
10
-
11.5
kW
, substrate temperatures of
1100
-
1200
°
C
, and pressures of
110
-
135
Torr
. The simultaneous synthesis of SCD over 70 diamond seeds yielded good quality SCD with deposition rates of
14
-
21
μ
m
∕
h
. Multiple deposition runs totaling
145
h
of deposition time added
1.8
-
2.5
mm
of diamond material to each of the 70 seed crystals. |
|---|---|
| ISSN: | 0003-6951 1077-3118 |
| DOI: | 10.1063/1.2961016 |