Multiple substrate microwave plasma-assisted chemical vapor deposition single crystal diamond synthesis
A multiple substrate, microwave plasma-assisted chemical vapor deposition synthesis process for single crystal diamond (SCD) is demonstrated using a 915 MHz reactor. Diamond synthesis was performed using input chemistries of 6-8% of C H 4 ∕ H 2 , microwave input powers of 10 - 11.5 kW , substrate te...
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| Veröffentlicht in: | Applied physics letters 2008-07, Vol.93 (3), p.031502-031502-3 |
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| container_end_page | 031502-3 |
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| container_issue | 3 |
| container_start_page | 031502 |
| container_title | Applied physics letters |
| container_volume | 93 |
| creator | Asmussen, J. Grotjohn, T. A. Schuelke, T. Becker, M. F. Yaran, M. K. King, D. J. Wicklein, S. Reinhard, D. K. |
| description | A multiple substrate, microwave plasma-assisted chemical vapor deposition synthesis process for single crystal diamond (SCD) is demonstrated using a
915
MHz
reactor. Diamond synthesis was performed using input chemistries of 6-8% of
C
H
4
∕
H
2
, microwave input powers of
10
-
11.5
kW
, substrate temperatures of
1100
-
1200
°
C
, and pressures of
110
-
135
Torr
. The simultaneous synthesis of SCD over 70 diamond seeds yielded good quality SCD with deposition rates of
14
-
21
μ
m
∕
h
. Multiple deposition runs totaling
145
h
of deposition time added
1.8
-
2.5
mm
of diamond material to each of the 70 seed crystals. |
| doi_str_mv | 10.1063/1.2961016 |
| format | Article |
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915
MHz
reactor. Diamond synthesis was performed using input chemistries of 6-8% of
C
H
4
∕
H
2
, microwave input powers of
10
-
11.5
kW
, substrate temperatures of
1100
-
1200
°
C
, and pressures of
110
-
135
Torr
. The simultaneous synthesis of SCD over 70 diamond seeds yielded good quality SCD with deposition rates of
14
-
21
μ
m
∕
h
. Multiple deposition runs totaling
145
h
of deposition time added
1.8
-
2.5
mm
of diamond material to each of the 70 seed crystals.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.2961016</identifier><identifier>CODEN: APPLAB</identifier><language>eng</language><publisher>United States: American Institute of Physics</publisher><subject>CHEMICAL VAPOR DEPOSITION ; CRYSTAL GROWTH ; DIAMONDS ; EPITAXY ; HYDROGEN ; LAYERS ; MATERIALS SCIENCE ; METHANE ; MHZ RANGE 100-1000 ; MICROWAVE RADIATION ; MONOCRYSTALS ; PLASMA ; SUBSTRATES ; SYNTHESIS</subject><ispartof>Applied physics letters, 2008-07, Vol.93 (3), p.031502-031502-3</ispartof><rights>2008 American Institute of Physics</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c378t-aafbd73b15c376a9a6cdb3c2c7e0d63a7a8462bb1ceea11de443c3daeded84913</citedby><cites>FETCH-LOGICAL-c378t-aafbd73b15c376a9a6cdb3c2c7e0d63a7a8462bb1ceea11de443c3daeded84913</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://pubs.aip.org/apl/article-lookup/doi/10.1063/1.2961016$$EHTML$$P50$$Gscitation$$H</linktohtml><link.rule.ids>230,314,780,784,794,885,1559,4512,27924,27925,76384,76390</link.rule.ids><backlink>$$Uhttps://www.osti.gov/biblio/21123987$$D View this record in Osti.gov$$Hfree_for_read</backlink></links><search><creatorcontrib>Asmussen, J.</creatorcontrib><creatorcontrib>Grotjohn, T. A.</creatorcontrib><creatorcontrib>Schuelke, T.</creatorcontrib><creatorcontrib>Becker, M. F.</creatorcontrib><creatorcontrib>Yaran, M. K.</creatorcontrib><creatorcontrib>King, D. J.</creatorcontrib><creatorcontrib>Wicklein, S.</creatorcontrib><creatorcontrib>Reinhard, D. K.</creatorcontrib><title>Multiple substrate microwave plasma-assisted chemical vapor deposition single crystal diamond synthesis</title><title>Applied physics letters</title><description>A multiple substrate, microwave plasma-assisted chemical vapor deposition synthesis process for single crystal diamond (SCD) is demonstrated using a
915
MHz
reactor. Diamond synthesis was performed using input chemistries of 6-8% of
C
H
4
∕
H
2
, microwave input powers of
10
-
11.5
kW
, substrate temperatures of
1100
-
1200
°
C
, and pressures of
110
-
135
Torr
. The simultaneous synthesis of SCD over 70 diamond seeds yielded good quality SCD with deposition rates of
14
-
21
μ
m
∕
h
. Multiple deposition runs totaling
145
h
of deposition time added
1.8
-
2.5
mm
of diamond material to each of the 70 seed crystals.</description><subject>CHEMICAL VAPOR DEPOSITION</subject><subject>CRYSTAL GROWTH</subject><subject>DIAMONDS</subject><subject>EPITAXY</subject><subject>HYDROGEN</subject><subject>LAYERS</subject><subject>MATERIALS SCIENCE</subject><subject>METHANE</subject><subject>MHZ RANGE 100-1000</subject><subject>MICROWAVE RADIATION</subject><subject>MONOCRYSTALS</subject><subject>PLASMA</subject><subject>SUBSTRATES</subject><subject>SYNTHESIS</subject><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2008</creationdate><recordtype>article</recordtype><recordid>eNp1kEtLA0EQhAdRMEYP_oMFTx42Tu8ks7sXQYIviHjR89A700lG9sX2JJJ_74REb56aor4uqBLiGuQEpFZ3MMlKDRL0iRiBzPNUARSnYiSlVKkuZ3AuLpi_opxlSo3E6m1TB9_XlPCm4jBgoKTxdui-cUtJXyM3mCKz50AusWuKJtbJFvtuSBz1HfvguzZh365iiB12HKLvPDZd6xLetWFN8ftSnC2xZro63rH4fHr8mL-ki_fn1_nDIrUqL0KKuKxcriqYRa2xRG1dpWxmc5JOK8yxmOqsqsASIYCj6VRZ5ZAcuWJaghqLm0Nux8Ebtj6QXduubckGkwFkqizySN0eqFiUeaCl6Qff4LAzIM1-RwPmuGNk7w_sPgz3Zf-Hf8c0f2OaRv0Aj3d-bg</recordid><startdate>20080721</startdate><enddate>20080721</enddate><creator>Asmussen, J.</creator><creator>Grotjohn, T. A.</creator><creator>Schuelke, T.</creator><creator>Becker, M. F.</creator><creator>Yaran, M. K.</creator><creator>King, D. J.</creator><creator>Wicklein, S.</creator><creator>Reinhard, D. K.</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope><scope>OTOTI</scope></search><sort><creationdate>20080721</creationdate><title>Multiple substrate microwave plasma-assisted chemical vapor deposition single crystal diamond synthesis</title><author>Asmussen, J. ; Grotjohn, T. A. ; Schuelke, T. ; Becker, M. F. ; Yaran, M. K. ; King, D. J. ; Wicklein, S. ; Reinhard, D. K.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c378t-aafbd73b15c376a9a6cdb3c2c7e0d63a7a8462bb1ceea11de443c3daeded84913</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2008</creationdate><topic>CHEMICAL VAPOR DEPOSITION</topic><topic>CRYSTAL GROWTH</topic><topic>DIAMONDS</topic><topic>EPITAXY</topic><topic>HYDROGEN</topic><topic>LAYERS</topic><topic>MATERIALS SCIENCE</topic><topic>METHANE</topic><topic>MHZ RANGE 100-1000</topic><topic>MICROWAVE RADIATION</topic><topic>MONOCRYSTALS</topic><topic>PLASMA</topic><topic>SUBSTRATES</topic><topic>SYNTHESIS</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Asmussen, J.</creatorcontrib><creatorcontrib>Grotjohn, T. A.</creatorcontrib><creatorcontrib>Schuelke, T.</creatorcontrib><creatorcontrib>Becker, M. F.</creatorcontrib><creatorcontrib>Yaran, M. K.</creatorcontrib><creatorcontrib>King, D. J.</creatorcontrib><creatorcontrib>Wicklein, S.</creatorcontrib><creatorcontrib>Reinhard, D. K.</creatorcontrib><collection>CrossRef</collection><collection>OSTI.GOV</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Asmussen, J.</au><au>Grotjohn, T. A.</au><au>Schuelke, T.</au><au>Becker, M. F.</au><au>Yaran, M. K.</au><au>King, D. J.</au><au>Wicklein, S.</au><au>Reinhard, D. K.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Multiple substrate microwave plasma-assisted chemical vapor deposition single crystal diamond synthesis</atitle><jtitle>Applied physics letters</jtitle><date>2008-07-21</date><risdate>2008</risdate><volume>93</volume><issue>3</issue><spage>031502</spage><epage>031502-3</epage><pages>031502-031502-3</pages><issn>0003-6951</issn><eissn>1077-3118</eissn><coden>APPLAB</coden><abstract>A multiple substrate, microwave plasma-assisted chemical vapor deposition synthesis process for single crystal diamond (SCD) is demonstrated using a
915
MHz
reactor. Diamond synthesis was performed using input chemistries of 6-8% of
C
H
4
∕
H
2
, microwave input powers of
10
-
11.5
kW
, substrate temperatures of
1100
-
1200
°
C
, and pressures of
110
-
135
Torr
. The simultaneous synthesis of SCD over 70 diamond seeds yielded good quality SCD with deposition rates of
14
-
21
μ
m
∕
h
. Multiple deposition runs totaling
145
h
of deposition time added
1.8
-
2.5
mm
of diamond material to each of the 70 seed crystals.</abstract><cop>United States</cop><pub>American Institute of Physics</pub><doi>10.1063/1.2961016</doi></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0003-6951 |
| ispartof | Applied physics letters, 2008-07, Vol.93 (3), p.031502-031502-3 |
| issn | 0003-6951 1077-3118 |
| language | eng |
| recordid | cdi_osti_scitechconnect_21123987 |
| source | AIP Journals Complete; AIP Digital Archive; Alma/SFX Local Collection |
| subjects | CHEMICAL VAPOR DEPOSITION CRYSTAL GROWTH DIAMONDS EPITAXY HYDROGEN LAYERS MATERIALS SCIENCE METHANE MHZ RANGE 100-1000 MICROWAVE RADIATION MONOCRYSTALS PLASMA SUBSTRATES SYNTHESIS |
| title | Multiple substrate microwave plasma-assisted chemical vapor deposition single crystal diamond synthesis |
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