Nonvolatile memories of Ge nanodots self-assembled by depositing ultrasmall amount Ge on SiO{sub 2} at room temperature

Nonvolatile memories of Ge nanodots self-assembled by depositing ultrasmall amount Ge on SiO{sub 2} at room temperature

Ge nanodots (NDs) for nonvolatile memories (NVMs) have been self-assembled at room temperature (RT) by ion beam sputtering deposition of ultrasmall amount Ge (

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Bibliographische Detailangaben
Veröffentlicht in:Applied physics letters 2008-03, Vol.92 (9)
Hauptverfasser: Hong, Seung Hui, Kim, Min Choul, Jeong, Pil Seong, Choi, Suk-Ho, Kim, Yong-Sung, Kim, Kyung Joong
Format: Artikel
Sprache:eng
Schlagworte:
CAPACITANCE
DEPOSITION
ELECTRIC POTENTIAL
GERMANIUM
HYSTERESIS
INTERFACES
ION BEAMS
LAYERS
MATERIALS SCIENCE
QUANTUM DOTS
SEMICONDUCTOR MATERIALS
SILICON
SILICON OXIDES
SPUTTERING
TEMPERATURE RANGE 0273-0400 K
TRANSMISSION ELECTRON MICROSCOPY
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Zusammenfassung:Ge nanodots (NDs) for nonvolatile memories (NVMs) have been self-assembled at room temperature (RT) by ion beam sputtering deposition of ultrasmall amount Ge (
ISSN:0003-6951
1077-3118
DOI:10.1063/1.2892494