Production of high-density capacitive plasma by the effects of multihollow cathode discharge and high-secondary-electron emission

High-density capacitively coupled plasma with electron density of 10 11 cm − 3 was produced with the effects of the multihollow cathode discharge and the high-secondary-electron emission from radio frequency (rf)-biased electrode using Ar gas. It was found that the optimum pressure was around 3 - 15 Pa . In the case of only multihollow cathode discharge, the plasma density increased from 1.2 × 10 10 to 8 × 10 10 cm − 3 with the increasing distance z from the cathode electrode for 5 mm < z < 15 mm . Moreover, plasma density increased with increasing voltage of rf-biased electrode. The rate of deposited amorphous hydrocarbon thin films of about 200 nm ∕ min was attained with the high-density rf plasma enhanced chemical vapor deposition using C H 4 gas.