Optical band gap of BiFeO{sub 3} grown by molecular-beam epitaxy
BiFeO{sub 3} thin films have been deposited on (001) SrTiO{sub 3} substrates by adsorption-controlled reactive molecular-beam epitaxy. For a given bismuth overpressure and oxygen activity, single-phase BiFeO{sub 3} films can be grown over a range of deposition temperatures in accordance with thermod...
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| Veröffentlicht in: | Applied physics letters 2008-04, Vol.92 (14) |
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| container_title | Applied physics letters |
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| creator | Ihlefeld, J. F. Department of Materials Science and Engineering, University of California, Berkeley, California 94720 Podraza, N. J. Liu, Z. K. Schlom, D. G. Rai, R. C. Xu, X. Musfeldt, J. L. Heeg, T. Schubert, J. Chen, Y. B. Pan, X. Q. Li, J. Collins, R. W. Ramesh, R. Department of Physics, University of California, Berkeley, California 94720 |
| description | BiFeO{sub 3} thin films have been deposited on (001) SrTiO{sub 3} substrates by adsorption-controlled reactive molecular-beam epitaxy. For a given bismuth overpressure and oxygen activity, single-phase BiFeO{sub 3} films can be grown over a range of deposition temperatures in accordance with thermodynamic calculations. Four-circle x-ray diffraction reveals phase-pure, epitaxial films with {omega} rocking curve full width at half maximum values as narrow as 29 arc sec (0.008 deg.). Multiple-angle spectroscopic ellipsometry reveals a direct optical band gap at 2.74 eV for stoichiometric as well as 5% bismuth-deficient single-phase BiFeO{sub 3} films. |
| doi_str_mv | 10.1063/1.2901160 |
| format | Article |
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F. ; Department of Materials Science and Engineering, University of California, Berkeley, California 94720 ; Podraza, N. J. ; Liu, Z. K. ; Schlom, D. G. ; Rai, R. C. ; Xu, X. ; Musfeldt, J. L. ; Heeg, T. ; Schubert, J. ; Chen, Y. B. ; Pan, X. Q. ; Li, J. ; Collins, R. W. ; Ramesh, R. ; Department of Physics, University of California, Berkeley, California 94720</creator><creatorcontrib>Ihlefeld, J. F. ; Department of Materials Science and Engineering, University of California, Berkeley, California 94720 ; Podraza, N. J. ; Liu, Z. K. ; Schlom, D. G. ; Rai, R. C. ; Xu, X. ; Musfeldt, J. L. ; Heeg, T. ; Schubert, J. ; Chen, Y. B. ; Pan, X. Q. ; Li, J. ; Collins, R. W. ; Ramesh, R. ; Department of Physics, University of California, Berkeley, California 94720</creatorcontrib><description>BiFeO{sub 3} thin films have been deposited on (001) SrTiO{sub 3} substrates by adsorption-controlled reactive molecular-beam epitaxy. 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Multiple-angle spectroscopic ellipsometry reveals a direct optical band gap at 2.74 eV for stoichiometric as well as 5% bismuth-deficient single-phase BiFeO{sub 3} films.</description><subject>ADSORPTION</subject><subject>BISMUTH</subject><subject>BISMUTH COMPOUNDS</subject><subject>CRYSTAL GROWTH</subject><subject>DEPOSITION</subject><subject>ELLIPSOMETRY</subject><subject>ENERGY GAP</subject><subject>EV RANGE 01-10</subject><subject>MATERIALS SCIENCE</subject><subject>MOLECULAR BEAM EPITAXY</subject><subject>NEUTRON DIFFRACTION</subject><subject>OXYGEN</subject><subject>STRONTIUM TITANATES</subject><subject>SUBSTRATES</subject><subject>THERMODYNAMICS</subject><subject>THIN FILMS</subject><subject>X-RAY DIFFRACTION</subject><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2008</creationdate><recordtype>article</recordtype><recordid>eNotzE9LwzAYgPEgCtbpwW8Q8JyZt2_bJDd1OBUGveh5vM2fWemasmToEL_7BD09_C4PY9cg5yAbvIV5aSRAI09YAVIpgQD6lBVSShSNqeGcXaT08cu6RCzYXTvl3tLAOxod39DEY-AP_dK332nfcfzhm138HHl34Ns4eLsfaCc6T1vupz7T1-GSnQUakr_674y9LR9fF89i1T69LO5XIgJgFg6107U1VQXeaVUFaTQEUhpJlwbRGVmSRedMbX1wtgrGgHJNB2SboABn7ObvG1Pu18n22dt3G8fR27wuASQYjXgEnatJJQ</recordid><startdate>20080407</startdate><enddate>20080407</enddate><creator>Ihlefeld, J. 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W.</au><au>Ramesh, R.</au><au>Department of Physics, University of California, Berkeley, California 94720</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Optical band gap of BiFeO{sub 3} grown by molecular-beam epitaxy</atitle><jtitle>Applied physics letters</jtitle><date>2008-04-07</date><risdate>2008</risdate><volume>92</volume><issue>14</issue><issn>0003-6951</issn><eissn>1077-3118</eissn><abstract>BiFeO{sub 3} thin films have been deposited on (001) SrTiO{sub 3} substrates by adsorption-controlled reactive molecular-beam epitaxy. For a given bismuth overpressure and oxygen activity, single-phase BiFeO{sub 3} films can be grown over a range of deposition temperatures in accordance with thermodynamic calculations. Four-circle x-ray diffraction reveals phase-pure, epitaxial films with {omega} rocking curve full width at half maximum values as narrow as 29 arc sec (0.008 deg.). Multiple-angle spectroscopic ellipsometry reveals a direct optical band gap at 2.74 eV for stoichiometric as well as 5% bismuth-deficient single-phase BiFeO{sub 3} films.</abstract><cop>United States</cop><doi>10.1063/1.2901160</doi><oa>free_for_read</oa></addata></record> |
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| ispartof | Applied physics letters, 2008-04, Vol.92 (14) |
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| language | eng |
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| source | AIP Journals Complete; AIP Digital Archive; Alma/SFX Local Collection |
| subjects | ADSORPTION BISMUTH BISMUTH COMPOUNDS CRYSTAL GROWTH DEPOSITION ELLIPSOMETRY ENERGY GAP EV RANGE 01-10 MATERIALS SCIENCE MOLECULAR BEAM EPITAXY NEUTRON DIFFRACTION OXYGEN STRONTIUM TITANATES SUBSTRATES THERMODYNAMICS THIN FILMS X-RAY DIFFRACTION |
| title | Optical band gap of BiFeO{sub 3} grown by molecular-beam epitaxy |
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