Sequential mechanism of electron transport in the resonant tunneling diode with thick barriers

Sequential mechanism of electron transport in the resonant tunneling diode with thick barriers

A frequency-dependent impedance analysis (0.1–50 GHz) of an InGaAs/InAlAs-based resonant tunneling diode with a 5-nm-wide well and 5-nm-thick barriers showed that the transport mechanism in such a diode is mostly sequential, rather than coherent, which is consistent with estimates. The possibility o...

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Veröffentlicht in:Semiconductors (Woodbury, N.Y.) N.Y.), 2007-02, Vol.41 (2), p.227-231
Hauptverfasser: Alkeev, N. V., Averin, S. V., Dorofeev, A. A., Velling, P., Khorenko, E., Prost, W., Tegude, F. J.
Format: Artikel
Sprache:eng
Schlagworte:
ALUMINIUM COMPOUNDS
CHARGE TRANSPORT
Electron transport
ELECTRONS
Frequency analysis
FREQUENCY DEPENDENCE
GALLIUM ARSENIDES
GHZ RANGE 01-100
IMPEDANCE
INDIUM ARSENIDES
MATERIALS SCIENCE
Resonant tunneling
TUNNEL DIODES
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Zusammenfassung:A frequency-dependent impedance analysis (0.1–50 GHz) of an InGaAs/InAlAs-based resonant tunneling diode with a 5-nm-wide well and 5-nm-thick barriers showed that the transport mechanism in such a diode is mostly sequential, rather than coherent, which is consistent with estimates. The possibility of determining the coherent and sequential mechanism fractions in the electron transport through the resonant tunneling diode by its frequency dependence on the impedance is discussed.
ISSN:1063-7826
1090-6479
DOI:10.1134/S1063782607020212