Surface electron states produced by a Rayleigh wave
The electronic properties of a semiconductor bounded by an uneven surface representing an infinitely high potential barrier are investigated. The surface irregularities are produced by a Rayleigh acoustic wave. It is shown that, on the boundary of a semiconductor, surface electron states (waves) may...
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Veröffentlicht in: | Journal of experimental and theoretical physics 2007-03, Vol.104 (3), p.467-473 |
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Hauptverfasser: | , , |
Format: | Artikel |
Sprache: | eng |
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Online-Zugang: | Volltext |
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Zusammenfassung: | The electronic properties of a semiconductor bounded by an uneven surface representing an infinitely high potential barrier are investigated. The surface irregularities are produced by a Rayleigh acoustic wave. It is shown that, on the boundary of a semiconductor, surface electron states (waves) may arise whose dispersion laws are obtained under the conditions when conduction electrons are located either in or outside the field of the acoustic wave. Existence domains of surface electron states are found that are distinguished by their physical properties. These domains are separated by a band gap whose width is determined by the height of irregularities. |
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ISSN: | 1063-7761 1090-6509 |
DOI: | 10.1134/S1063776107030132 |