Pairwise cobalt doping of boron carbides with cobaltocene

We have performed Co K -edge x-ray absorption fine structure and x-ray absorption near edge structure measurements of Co-doped plasma enhanced chemical vapor phase deposition (PECVD) grown " C 2 B 10 H x " semiconducting boron carbides, using cobaltocene. Cobalt does not dope PECVD grown b...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Journal of applied physics 2007-10, Vol.102 (8), p.083520-083520-6
Hauptverfasser: Ignatov, A. Yu, Losovyj, Ya B., Carlson, L., LaGraffe, D., Brand, J. I., Dowben, P. A.
Format: Artikel
Sprache:eng
Schlagworte:
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:We have performed Co K -edge x-ray absorption fine structure and x-ray absorption near edge structure measurements of Co-doped plasma enhanced chemical vapor phase deposition (PECVD) grown " C 2 B 10 H x " semiconducting boron carbides, using cobaltocene. Cobalt does not dope PECVD grown boron carbides as a random fragment of the cobaltocene source gas. The Co atoms are fivefold boron coordinated ( R = 2.10 ± 0.02 Å ) and are chemically bonded to the icosahedral cages of B 10 C H x or B 9 C 2 H y . Pairwise Co doping occurs, with the cobalt atoms favoring sites some 5.28 ± 0.02 Å apart.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.2799053