GaN/AlN Quantum Wells and Quantum Dots for Unipolar Devices at Telecommunication Wavelengths

We report on the latest achievements in terms of growth and optical investigation of ultrathin GaN/AlN isolated and coupled quantum wells grown by plasma-assisted molecular-beam epitaxy. We also present the observation of intraband absorption in self-organized GaN quantum dots and on the application...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Julien, Francois H., Tchernycheva, Maria, Doyennette, Laetitia, Nevou, Laurent, Lupu, Anatole, Warde, Elias, Guillot, Fabien, Monroy, Eva, Bellet-Amalric, Edith, Vardi, Alon, Bahir, Gad
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	ABSORPTION ALUMINIUM NITRIDES DATA TRANSMISSION DEPOSITION GALLIUM NITRIDES MATERIALS SCIENCE MOLECULAR BEAM EPITAXY PHOTODETECTORS PLASMA QUANTUM DOTS QUANTUM WELLS SEMICONDUCTOR MATERIALS WAVELENGTHS
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