GaN/AlN Quantum Wells and Quantum Dots for Unipolar Devices at Telecommunication Wavelengths

GaN/AlN Quantum Wells and Quantum Dots for Unipolar Devices at Telecommunication Wavelengths

We report on the latest achievements in terms of growth and optical investigation of ultrathin GaN/AlN isolated and coupled quantum wells grown by plasma-assisted molecular-beam epitaxy. We also present the observation of intraband absorption in self-organized GaN quantum dots and on the application...

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Bibliographische Detailangaben
Hauptverfasser: Julien, Francois H., Tchernycheva, Maria, Doyennette, Laetitia, Nevou, Laurent, Lupu, Anatole, Warde, Elias, Guillot, Fabien, Monroy, Eva, Bellet-Amalric, Edith, Vardi, Alon, Bahir, Gad
Format: Tagungsbericht
Sprache:eng
Schlagworte:
ABSORPTION
ALUMINIUM NITRIDES
DATA TRANSMISSION
DEPOSITION
GALLIUM NITRIDES
MATERIALS SCIENCE
MOLECULAR BEAM EPITAXY
PHOTODETECTORS
PLASMA
QUANTUM DOTS
QUANTUM WELLS
SEMICONDUCTOR MATERIALS
WAVELENGTHS
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Beschreibung
Zusammenfassung:We report on the latest achievements in terms of growth and optical investigation of ultrathin GaN/AlN isolated and coupled quantum wells grown by plasma-assisted molecular-beam epitaxy. We also present the observation of intraband absorption in self-organized GaN quantum dots and on the application to infrared photodetection at telecommunication wavelengths.
ISSN:0094-243X
1551-7616
DOI:10.1063/1.2729997