Silicon Stokes terahertz laser

A Raman-type silicon laser at terahertz frequencies has been realized. Stokes-shifted stimulated emission has been observed from silicon crystals doped by antimony donors when optically excited by an infrared free electron laser. The Raman lasing was obtained due to resonant scattering on electronic...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Pavlov, S G, Hubers, H-W, Hovenier, J N, Klaassen, T O, Carder, D A, Phillips, P J, Redlich, B, Riemann, H, Zhukavin, R Kh, Shastin, V N
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	ANTIMONY CRYSTAL DOPING CRYSTALS DOPED MATERIALS FREE ELECTRON LASERS MATERIALS SCIENCE RAMAN SPECTRA RESONANCE SCATTERING SEMICONDUCTOR LASERS SILICON STIMULATED EMISSION THZ RANGE
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!