Silicon Stokes terahertz laser

Silicon Stokes terahertz laser

A Raman-type silicon laser at terahertz frequencies has been realized. Stokes-shifted stimulated emission has been observed from silicon crystals doped by antimony donors when optically excited by an infrared free electron laser. The Raman lasing was obtained due to resonant scattering on electronic...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: Pavlov, S G, Hubers, H-W, Hovenier, J N, Klaassen, T O, Carder, D A, Phillips, P J, Redlich, B, Riemann, H, Zhukavin, R Kh, Shastin, V N
Format: Tagungsbericht
Sprache:eng
Schlagworte:
ANTIMONY
CRYSTAL DOPING
CRYSTALS
DOPED MATERIALS
FREE ELECTRON LASERS
MATERIALS SCIENCE
RAMAN SPECTRA
RESONANCE SCATTERING
SEMICONDUCTOR LASERS
SILICON
STIMULATED EMISSION
THZ RANGE
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Beschreibung
Zusammenfassung:A Raman-type silicon laser at terahertz frequencies has been realized. Stokes-shifted stimulated emission has been observed from silicon crystals doped by antimony donors when optically excited by an infrared free electron laser. The Raman lasing was obtained due to resonant scattering on electronic states of a donor atom.
ISSN:0094-243X
1551-7616
DOI:10.1063/1.2730450