Silicon Stokes terahertz laser
A Raman-type silicon laser at terahertz frequencies has been realized. Stokes-shifted stimulated emission has been observed from silicon crystals doped by antimony donors when optically excited by an infrared free electron laser. The Raman lasing was obtained due to resonant scattering on electronic...
Gespeichert in:
| Hauptverfasser: | , , , , , , , , , |
|---|---|
| Format: | Tagungsbericht |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 1446 |
|---|---|
| container_issue | 1 |
| container_start_page | 1445 |
| container_title | |
| container_volume | 893 |
| creator | Pavlov, S G Hubers, H-W Hovenier, J N Klaassen, T O Carder, D A Phillips, P J Redlich, B Riemann, H Zhukavin, R Kh Shastin, V N |
| description | A Raman-type silicon laser at terahertz frequencies has been realized. Stokes-shifted stimulated emission has been observed from silicon crystals doped by antimony donors when optically excited by an infrared free electron laser. The Raman lasing was obtained due to resonant scattering on electronic states of a donor atom. |
| doi_str_mv | 10.1063/1.2730450 |
| format | Conference Proceeding |
| fullrecord | <record><control><sourceid>proquest_osti_</sourceid><recordid>TN_cdi_osti_scitechconnect_21055044</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>29946669</sourcerecordid><originalsourceid>FETCH-LOGICAL-o214t-20a1e72288e0ff01034a1acc8cb850f889879cf1a7a19c22d9d5e41d8745a7913</originalsourceid><addsrcrecordid>eNotjstKw0AUQAcfYKxd-AMSENyl3juP3JmllPqAgosquAvj5IZGY0Yz041fb6GuzuZwOEJcIiwQanWLC0kKtIEjUaAxWFGN9bGYO7JAymhQjuBEFABOV1KrtzNxntIHgHREthBXm37oQxzLTY6fnMrMk9_ylH_LwSeeLsRp54fE83_OxOv96mX5WK2fH56Wd-sqStS5kuCRSUprGboOEJT26EOw4d0a6Kx1llzo0JNHF6RsXWtYY2tJG08O1UxcH7ox5b5Joc8ctvutkUNuJIIxoPXeujlY31P82XHKzVefAg-DHznuUiOd03VdO_UHccBNFQ</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>conference_proceeding</recordtype><pqid>29946669</pqid></control><display><type>conference_proceeding</type><title>Silicon Stokes terahertz laser</title><source>AIP Journals Complete</source><creator>Pavlov, S G ; Hubers, H-W ; Hovenier, J N ; Klaassen, T O ; Carder, D A ; Phillips, P J ; Redlich, B ; Riemann, H ; Zhukavin, R Kh ; Shastin, V N</creator><creatorcontrib>Pavlov, S G ; Hubers, H-W ; Hovenier, J N ; Klaassen, T O ; Carder, D A ; Phillips, P J ; Redlich, B ; Riemann, H ; Zhukavin, R Kh ; Shastin, V N</creatorcontrib><description>A Raman-type silicon laser at terahertz frequencies has been realized. Stokes-shifted stimulated emission has been observed from silicon crystals doped by antimony donors when optically excited by an infrared free electron laser. The Raman lasing was obtained due to resonant scattering on electronic states of a donor atom.</description><identifier>ISSN: 0094-243X</identifier><identifier>ISBN: 9780735403970</identifier><identifier>ISBN: 073540397X</identifier><identifier>EISSN: 1551-7616</identifier><identifier>DOI: 10.1063/1.2730450</identifier><language>eng</language><publisher>United States</publisher><subject>ANTIMONY ; CRYSTAL DOPING ; CRYSTALS ; DOPED MATERIALS ; FREE ELECTRON LASERS ; MATERIALS SCIENCE ; RAMAN SPECTRA ; RESONANCE SCATTERING ; SEMICONDUCTOR LASERS ; SILICON ; STIMULATED EMISSION ; THZ RANGE</subject><ispartof>AIP conference proceedings, 2007, Vol.893 (1), p.1445-1446</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>230,314,780,784,885,27923,27924</link.rule.ids><backlink>$$Uhttps://www.osti.gov/biblio/21055044$$D View this record in Osti.gov$$Hfree_for_read</backlink></links><search><creatorcontrib>Pavlov, S G</creatorcontrib><creatorcontrib>Hubers, H-W</creatorcontrib><creatorcontrib>Hovenier, J N</creatorcontrib><creatorcontrib>Klaassen, T O</creatorcontrib><creatorcontrib>Carder, D A</creatorcontrib><creatorcontrib>Phillips, P J</creatorcontrib><creatorcontrib>Redlich, B</creatorcontrib><creatorcontrib>Riemann, H</creatorcontrib><creatorcontrib>Zhukavin, R Kh</creatorcontrib><creatorcontrib>Shastin, V N</creatorcontrib><title>Silicon Stokes terahertz laser</title><title>AIP conference proceedings</title><description>A Raman-type silicon laser at terahertz frequencies has been realized. Stokes-shifted stimulated emission has been observed from silicon crystals doped by antimony donors when optically excited by an infrared free electron laser. The Raman lasing was obtained due to resonant scattering on electronic states of a donor atom.</description><subject>ANTIMONY</subject><subject>CRYSTAL DOPING</subject><subject>CRYSTALS</subject><subject>DOPED MATERIALS</subject><subject>FREE ELECTRON LASERS</subject><subject>MATERIALS SCIENCE</subject><subject>RAMAN SPECTRA</subject><subject>RESONANCE SCATTERING</subject><subject>SEMICONDUCTOR LASERS</subject><subject>SILICON</subject><subject>STIMULATED EMISSION</subject><subject>THZ RANGE</subject><issn>0094-243X</issn><issn>1551-7616</issn><isbn>9780735403970</isbn><isbn>073540397X</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2007</creationdate><recordtype>conference_proceeding</recordtype><recordid>eNotjstKw0AUQAcfYKxd-AMSENyl3juP3JmllPqAgosquAvj5IZGY0Yz041fb6GuzuZwOEJcIiwQanWLC0kKtIEjUaAxWFGN9bGYO7JAymhQjuBEFABOV1KrtzNxntIHgHREthBXm37oQxzLTY6fnMrMk9_ylH_LwSeeLsRp54fE83_OxOv96mX5WK2fH56Wd-sqStS5kuCRSUprGboOEJT26EOw4d0a6Kx1llzo0JNHF6RsXWtYY2tJG08O1UxcH7ox5b5Joc8ctvutkUNuJIIxoPXeujlY31P82XHKzVefAg-DHznuUiOd03VdO_UHccBNFQ</recordid><startdate>20070101</startdate><enddate>20070101</enddate><creator>Pavlov, S G</creator><creator>Hubers, H-W</creator><creator>Hovenier, J N</creator><creator>Klaassen, T O</creator><creator>Carder, D A</creator><creator>Phillips, P J</creator><creator>Redlich, B</creator><creator>Riemann, H</creator><creator>Zhukavin, R Kh</creator><creator>Shastin, V N</creator><scope>7U5</scope><scope>8FD</scope><scope>L7M</scope><scope>OTOTI</scope></search><sort><creationdate>20070101</creationdate><title>Silicon Stokes terahertz laser</title><author>Pavlov, S G ; Hubers, H-W ; Hovenier, J N ; Klaassen, T O ; Carder, D A ; Phillips, P J ; Redlich, B ; Riemann, H ; Zhukavin, R Kh ; Shastin, V N</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-o214t-20a1e72288e0ff01034a1acc8cb850f889879cf1a7a19c22d9d5e41d8745a7913</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2007</creationdate><topic>ANTIMONY</topic><topic>CRYSTAL DOPING</topic><topic>CRYSTALS</topic><topic>DOPED MATERIALS</topic><topic>FREE ELECTRON LASERS</topic><topic>MATERIALS SCIENCE</topic><topic>RAMAN SPECTRA</topic><topic>RESONANCE SCATTERING</topic><topic>SEMICONDUCTOR LASERS</topic><topic>SILICON</topic><topic>STIMULATED EMISSION</topic><topic>THZ RANGE</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Pavlov, S G</creatorcontrib><creatorcontrib>Hubers, H-W</creatorcontrib><creatorcontrib>Hovenier, J N</creatorcontrib><creatorcontrib>Klaassen, T O</creatorcontrib><creatorcontrib>Carder, D A</creatorcontrib><creatorcontrib>Phillips, P J</creatorcontrib><creatorcontrib>Redlich, B</creatorcontrib><creatorcontrib>Riemann, H</creatorcontrib><creatorcontrib>Zhukavin, R Kh</creatorcontrib><creatorcontrib>Shastin, V N</creatorcontrib><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>OSTI.GOV</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Pavlov, S G</au><au>Hubers, H-W</au><au>Hovenier, J N</au><au>Klaassen, T O</au><au>Carder, D A</au><au>Phillips, P J</au><au>Redlich, B</au><au>Riemann, H</au><au>Zhukavin, R Kh</au><au>Shastin, V N</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Silicon Stokes terahertz laser</atitle><btitle>AIP conference proceedings</btitle><date>2007-01-01</date><risdate>2007</risdate><volume>893</volume><issue>1</issue><spage>1445</spage><epage>1446</epage><pages>1445-1446</pages><issn>0094-243X</issn><eissn>1551-7616</eissn><isbn>9780735403970</isbn><isbn>073540397X</isbn><abstract>A Raman-type silicon laser at terahertz frequencies has been realized. Stokes-shifted stimulated emission has been observed from silicon crystals doped by antimony donors when optically excited by an infrared free electron laser. The Raman lasing was obtained due to resonant scattering on electronic states of a donor atom.</abstract><cop>United States</cop><doi>10.1063/1.2730450</doi><tpages>2</tpages></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0094-243X |
| ispartof | AIP conference proceedings, 2007, Vol.893 (1), p.1445-1446 |
| issn | 0094-243X 1551-7616 |
| language | eng |
| recordid | cdi_osti_scitechconnect_21055044 |
| source | AIP Journals Complete |
| subjects | ANTIMONY CRYSTAL DOPING CRYSTALS DOPED MATERIALS FREE ELECTRON LASERS MATERIALS SCIENCE RAMAN SPECTRA RESONANCE SCATTERING SEMICONDUCTOR LASERS SILICON STIMULATED EMISSION THZ RANGE |
| title | Silicon Stokes terahertz laser |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-08T07%3A37%3A15IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_osti_&rft_val_fmt=info:ofi/fmt:kev:mtx:book&rft.genre=proceeding&rft.atitle=Silicon%20Stokes%20terahertz%20laser&rft.btitle=AIP%20conference%20proceedings&rft.au=Pavlov,%20S%20G&rft.date=2007-01-01&rft.volume=893&rft.issue=1&rft.spage=1445&rft.epage=1446&rft.pages=1445-1446&rft.issn=0094-243X&rft.eissn=1551-7616&rft.isbn=9780735403970&rft.isbn_list=073540397X&rft_id=info:doi/10.1063/1.2730450&rft_dat=%3Cproquest_osti_%3E29946669%3C/proquest_osti_%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=29946669&rft_id=info:pmid/&rfr_iscdi=true |