Quenching of surface-exciton emission from ZnO nanocombs by plasma immersion ion implantation
Surface modification of ZnO nanocombs was performed through a Ti plasma immersion ion implantation (PIII) with low bias voltages ranging from 0 to 5 kV to quench surface-originated exciton emission. The ion energy dependent surface modification on ZnO was investigated using transmission electron mic...
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Veröffentlicht in: | Applied physics letters 2007-08, Vol.91 (7), p.071921-071921-3 |
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Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | Surface modification of ZnO nanocombs was performed through a Ti plasma immersion ion implantation (PIII) with low bias voltages ranging from
0
to
5
kV
to quench surface-originated exciton emission. The ion energy dependent surface modification on ZnO was investigated using transmission electron microscopy and temperature-dependent photoluminescence (PL). The surface exciton (SX) was clearly identified for the as-grown sample at
4.5
K
, and complete quenching was observed for sample treated with
5
kV
PIII due to surface state passivation. The SX related surface states were located within
5
nm
in depth from the surface corresponding to the implantation depth of
5
kV
PIII. Room-temperature PL enhancement of these surface-modified ZnO nanocombs was observed and discussed. The results show that PIII can become a viable technique for nanostructure surface passivation. |
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ISSN: | 0003-6951 1077-3118 |
DOI: | 10.1063/1.2772668 |