The influence of electron irradiation on electron holography of focused ion beam milled GaAs p - n junctions

Electron beam irradiation is shown to significantly influence phase images recorded from focused ion beam milled GaAs p - n junction specimens examined using off-axis electron holography in the transmission electron microscope. Our results show that the use of improved electrical connections to the...

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Veröffentlicht in:Journal of applied physics 2007-05, Vol.101 (9), p.094508-094508-5
Hauptverfasser: Cooper, David, Twitchett-Harrison, Alison C., Midgley, Paul A., Dunin-Borkowski, Rafal E.
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container_end_page 094508-5
container_issue 9
container_start_page 094508
container_title Journal of applied physics
container_volume 101
creator Cooper, David
Twitchett-Harrison, Alison C.
Midgley, Paul A.
Dunin-Borkowski, Rafal E.
description Electron beam irradiation is shown to significantly influence phase images recorded from focused ion beam milled GaAs p - n junction specimens examined using off-axis electron holography in the transmission electron microscope. Our results show that the use of improved electrical connections to the specimen overcomes this problem, and may allow the correct built in potential across the junction to be recovered.
doi_str_mv 10.1063/1.2730557
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source AIP Journals Complete; AIP Digital Archive
subjects CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS
ELECTRON BEAMS
ELECTRONS
GALLIUM ARSENIDES
HOLOGRAPHY
ION BEAMS
IRRADIATION
P-N JUNCTIONS
SEMICONDUCTOR MATERIALS
TRANSMISSION ELECTRON MICROSCOPY
title The influence of electron irradiation on electron holography of focused ion beam milled GaAs p - n junctions
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