The influence of electron irradiation on electron holography of focused ion beam milled GaAs p - n junctions
Electron beam irradiation is shown to significantly influence phase images recorded from focused ion beam milled GaAs p - n junction specimens examined using off-axis electron holography in the transmission electron microscope. Our results show that the use of improved electrical connections to the...
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Veröffentlicht in: | Journal of applied physics 2007-05, Vol.101 (9), p.094508-094508-5 |
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container_title | Journal of applied physics |
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creator | Cooper, David Twitchett-Harrison, Alison C. Midgley, Paul A. Dunin-Borkowski, Rafal E. |
description | Electron beam irradiation is shown to significantly influence phase images recorded from focused ion beam milled GaAs
p
-
n
junction specimens examined using off-axis electron holography in the transmission electron microscope. Our results show that the use of improved electrical connections to the specimen overcomes this problem, and may allow the correct built in potential across the junction to be recovered. |
doi_str_mv | 10.1063/1.2730557 |
format | Article |
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p
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n
junction specimens examined using off-axis electron holography in the transmission electron microscope. Our results show that the use of improved electrical connections to the specimen overcomes this problem, and may allow the correct built in potential across the junction to be recovered.</description><identifier>ISSN: 0021-8979</identifier><identifier>EISSN: 1089-7550</identifier><identifier>DOI: 10.1063/1.2730557</identifier><identifier>CODEN: JAPIAU</identifier><language>eng</language><publisher>United States: American Institute of Physics</publisher><subject>CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS ; ELECTRON BEAMS ; ELECTRONS ; GALLIUM ARSENIDES ; HOLOGRAPHY ; ION BEAMS ; IRRADIATION ; P-N JUNCTIONS ; SEMICONDUCTOR MATERIALS ; TRANSMISSION ELECTRON MICROSCOPY</subject><ispartof>Journal of applied physics, 2007-05, Vol.101 (9), p.094508-094508-5</ispartof><rights>2007 American Institute of Physics</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c378t-4a628ca96e7d18c3dfe474cb9805dcceae37f75d0476b532ccc8568e961dab8c3</citedby><cites>FETCH-LOGICAL-c378t-4a628ca96e7d18c3dfe474cb9805dcceae37f75d0476b532ccc8568e961dab8c3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://pubs.aip.org/jap/article-lookup/doi/10.1063/1.2730557$$EHTML$$P50$$Gscitation$$H</linktohtml><link.rule.ids>230,314,780,784,794,885,1559,4512,27924,27925,76256,76262</link.rule.ids><backlink>$$Uhttps://www.osti.gov/biblio/20982851$$D View this record in Osti.gov$$Hfree_for_read</backlink></links><search><creatorcontrib>Cooper, David</creatorcontrib><creatorcontrib>Twitchett-Harrison, Alison C.</creatorcontrib><creatorcontrib>Midgley, Paul A.</creatorcontrib><creatorcontrib>Dunin-Borkowski, Rafal E.</creatorcontrib><title>The influence of electron irradiation on electron holography of focused ion beam milled GaAs p - n junctions</title><title>Journal of applied physics</title><description>Electron beam irradiation is shown to significantly influence phase images recorded from focused ion beam milled GaAs
p
-
n
junction specimens examined using off-axis electron holography in the transmission electron microscope. Our results show that the use of improved electrical connections to the specimen overcomes this problem, and may allow the correct built in potential across the junction to be recovered.</description><subject>CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS</subject><subject>ELECTRON BEAMS</subject><subject>ELECTRONS</subject><subject>GALLIUM ARSENIDES</subject><subject>HOLOGRAPHY</subject><subject>ION BEAMS</subject><subject>IRRADIATION</subject><subject>P-N JUNCTIONS</subject><subject>SEMICONDUCTOR MATERIALS</subject><subject>TRANSMISSION ELECTRON MICROSCOPY</subject><issn>0021-8979</issn><issn>1089-7550</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2007</creationdate><recordtype>article</recordtype><recordid>eNp1kMFKAzEQhoMoWKsH3yDgycPWZLPZJBehFK1CwUs9h-xsYlO2m5JsD317s7b0JgQmM3zzw3wIPVIyo6RmL3RWCkY4F1doQolUheCcXKMJISUtpBLqFt2ltCWEUsnUBHXrjcW-d93B9mBxcNh2FoYYeuxjNK03g8___C7zTejCTzT7zXHEXYBDsi0eqcaaHd75rsv90swT3uMC93h76GFMSffoxpku2YdznaLv97f14qNYfS0_F_NVAUzIoahMXUowqraipRJY62wlKmiUJLwFsMYy4QRvSSXqhrMSACSvpVU1bU2TF6bo6ZQb0uB1Aj9Y2EDo-3yBLomSpeQ0U88nCmJIKVqn99HvTDxqSvQoU1N9lpnZ1xM7hv0p-R_ORvXFqA5OZ3PsFzzDfPI</recordid><startdate>20070501</startdate><enddate>20070501</enddate><creator>Cooper, David</creator><creator>Twitchett-Harrison, Alison C.</creator><creator>Midgley, Paul A.</creator><creator>Dunin-Borkowski, Rafal E.</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope><scope>OTOTI</scope></search><sort><creationdate>20070501</creationdate><title>The influence of electron irradiation on electron holography of focused ion beam milled GaAs p - n junctions</title><author>Cooper, David ; Twitchett-Harrison, Alison C. ; Midgley, Paul A. ; Dunin-Borkowski, Rafal E.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c378t-4a628ca96e7d18c3dfe474cb9805dcceae37f75d0476b532ccc8568e961dab8c3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2007</creationdate><topic>CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS</topic><topic>ELECTRON BEAMS</topic><topic>ELECTRONS</topic><topic>GALLIUM ARSENIDES</topic><topic>HOLOGRAPHY</topic><topic>ION BEAMS</topic><topic>IRRADIATION</topic><topic>P-N JUNCTIONS</topic><topic>SEMICONDUCTOR MATERIALS</topic><topic>TRANSMISSION ELECTRON MICROSCOPY</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Cooper, David</creatorcontrib><creatorcontrib>Twitchett-Harrison, Alison C.</creatorcontrib><creatorcontrib>Midgley, Paul A.</creatorcontrib><creatorcontrib>Dunin-Borkowski, Rafal E.</creatorcontrib><collection>CrossRef</collection><collection>OSTI.GOV</collection><jtitle>Journal of applied physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Cooper, David</au><au>Twitchett-Harrison, Alison C.</au><au>Midgley, Paul A.</au><au>Dunin-Borkowski, Rafal E.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>The influence of electron irradiation on electron holography of focused ion beam milled GaAs p - n junctions</atitle><jtitle>Journal of applied physics</jtitle><date>2007-05-01</date><risdate>2007</risdate><volume>101</volume><issue>9</issue><spage>094508</spage><epage>094508-5</epage><pages>094508-094508-5</pages><issn>0021-8979</issn><eissn>1089-7550</eissn><coden>JAPIAU</coden><abstract>Electron beam irradiation is shown to significantly influence phase images recorded from focused ion beam milled GaAs
p
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n
junction specimens examined using off-axis electron holography in the transmission electron microscope. Our results show that the use of improved electrical connections to the specimen overcomes this problem, and may allow the correct built in potential across the junction to be recovered.</abstract><cop>United States</cop><pub>American Institute of Physics</pub><doi>10.1063/1.2730557</doi></addata></record> |
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ispartof | Journal of applied physics, 2007-05, Vol.101 (9), p.094508-094508-5 |
issn | 0021-8979 1089-7550 |
language | eng |
recordid | cdi_osti_scitechconnect_20982851 |
source | AIP Journals Complete; AIP Digital Archive |
subjects | CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS ELECTRON BEAMS ELECTRONS GALLIUM ARSENIDES HOLOGRAPHY ION BEAMS IRRADIATION P-N JUNCTIONS SEMICONDUCTOR MATERIALS TRANSMISSION ELECTRON MICROSCOPY |
title | The influence of electron irradiation on electron holography of focused ion beam milled GaAs p - n junctions |
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