The influence of electron irradiation on electron holography of focused ion beam milled GaAs p - n junctions

The influence of electron irradiation on electron holography of focused ion beam milled GaAs p - n junctions

Electron beam irradiation is shown to significantly influence phase images recorded from focused ion beam milled GaAs p - n junction specimens examined using off-axis electron holography in the transmission electron microscope. Our results show that the use of improved electrical connections to the...

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Veröffentlicht in:Journal of applied physics 2007-05, Vol.101 (9), p.094508-094508-5
Hauptverfasser: Cooper, David, Twitchett-Harrison, Alison C., Midgley, Paul A., Dunin-Borkowski, Rafal E.
Format: Artikel
Sprache:eng
Schlagworte:
CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS
ELECTRON BEAMS
ELECTRONS
GALLIUM ARSENIDES
HOLOGRAPHY
ION BEAMS
IRRADIATION
P-N JUNCTIONS
SEMICONDUCTOR MATERIALS
TRANSMISSION ELECTRON MICROSCOPY
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Zusammenfassung:Electron beam irradiation is shown to significantly influence phase images recorded from focused ion beam milled GaAs p - n junction specimens examined using off-axis electron holography in the transmission electron microscope. Our results show that the use of improved electrical connections to the specimen overcomes this problem, and may allow the correct built in potential across the junction to be recovered.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.2730557