Epitaxial gadolinium nitride thin films
GdN thin films are deposited on MgO(100) by low-energy ion-beam-assisted molecular-beam epitaxy at elevated temperatures. Elemental analysis by secondary-ion mass spectrometry proves that a protective layer is imperative to avoid oxidation of the GdN films in air. In situ surface structural investig...
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Veröffentlicht in: | Applied physics letters 2007-02, Vol.90 (6), p.061919-061919-3 |
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Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | GdN thin films are deposited on MgO(100) by low-energy ion-beam-assisted molecular-beam epitaxy at elevated temperatures. Elemental analysis by secondary-ion mass spectrometry proves that a protective layer is imperative to avoid oxidation of the GdN films in air.
In situ
surface structural investigation of the growing GdN films by reflection high-energy electron diffraction reveals epitaxial film growth. This result is confirmed by x-ray diffraction structure and texture analysis. Accordingly, the GdN films on MgO(100) exhibit cube-on-cube epitaxy. Due to the epitaxial growth the crystalline quality of the films is by far higher than that of films previously reported of in literature. |
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ISSN: | 0003-6951 1077-3118 |
DOI: | 10.1063/1.2472538 |