Thermal instability and the growth of the InGaAs∕AlGaAs pseudomorphic high electron mobility transistor system
The effects of temperature overshoot during molecular beam epitaxy growth on the transport properties of conventionally and delta-doped pseudomorphic high electron mobility transistor (pHEMT) structures have been examined. A diffuse reflectance spectroscopy (DRS)-controlled versus a thermocouple (TC...
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Veröffentlicht in: | Applied physics letters 2007-03, Vol.90 (11) |
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Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | The effects of temperature overshoot during molecular beam epitaxy growth on the transport properties of conventionally and delta-doped pseudomorphic high electron mobility transistor (pHEMT) structures have been examined. A diffuse reflectance spectroscopy (DRS)-controlled versus a thermocouple (TC)-controlled, growth scheme is compared. Several advantages of the DRS-grown pHEMTs over the TC-controlled version were observed. Modest improvements in mobility, on the order of 2%–3%, were observed in addition to a 20% reduction in carrier freeze-out for the DRS-grown pHEMTs at 77K. |
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ISSN: | 0003-6951 1077-3118 |
DOI: | 10.1063/1.2713165 |