Photoluminescence of Tb{sup 3+} doped SiN{sub x} films grown by plasma-enhanced chemical vapor deposition

Room temperature photoluminescence (PL) properties of the Tb{sup 3+} ion implanted nonstoichiometric silicon nitride (Tb{sup 3+}:SiN{sub x}) and silicon dioxide (Tb{sup 3+}:SiO{sub x}) were studied. The films were deposited by plasma-enhanced chemical vapor deposition and then annealed at different temperatures for 1 h in flowing N{sub 2} before or after the implantation. Results show that there are four intense PL peaks due to the intra-4f transitions of Tb{sup 3+} in the wavelength from 470 to 625 nm for both kinds of films. Moreover, after postannealing at 1000 deg. C, the integrated PL intensity of Tb{sup 3+}:SiN{sub x} is much higher than that of Tb{sup 3+}:SiO{sub x}. The energy transfer from the defect related energy levels to the Tb{sup 3+} ions will enhance the {sup 5}D{sub 4}{yields}{sup 7}F{sub k} (k=3-6) luminescence of Tb{sup 3+} ions.