Suppression of interfacial reaction for HfO{sub 2} on silicon by pre-CF{sub 4} plasma treatment

Suppression of interfacial reaction for HfO{sub 2} on silicon by pre-CF{sub 4} plasma treatment

In this letter, the effects of pre-CF{sub 4} plasma treatment on Si for sputtered HfO{sub 2} gate dielectrics are investigated. The significant fluorine was incorporated at the HfO{sub 2}/Si substrate interface for a sample with the CF{sub 4} plasma pretreatment. The Hf silicide was suppressed and H...

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Veröffentlicht in:Applied physics letters 2006-08, Vol.89 (7)
Hauptverfasser: Lai, C.S., Wu, W.C., Chao, T.S., Chen, J.H., Wang, J.C., Tay, L.-L., Rowell, Nelson, Department of Electronic Physics, National Chiao Tung University, 1001 Ta Hsueh Rd., Hsinchu 300, Taiwan, Department of Electronics Engineering, National Chiao Tung University, 1001 Ta Hsueh Rd., Hsinchu 300, Taiwan, Nanya Technology Corporation, Hwa-Ya Technology Park, 669 Fu-Hsing 3rd Rd., Kueishan, Taoyuan 338, Taiwan, Institute for Microstructural Sciences, National Research Council of Canada, 1200 Montreal Road, Ottawa, Ontario K1A 0R6
Format: Artikel
Sprache:eng
Schlagworte:
CARBON TETRAFLUORIDE
CHEMICAL BONDS
DIELECTRIC MATERIALS
FLUORINE
HAFNIUM OXIDES
LAYERS
MATERIALS SCIENCE
OXYGEN
PLASMA
SEMICONDUCTOR MATERIALS
SILICIDES
SILICON
SUBSTRATES
SURFACE TREATMENTS
THICKNESS
THIN FILMS
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Zusammenfassung:In this letter, the effects of pre-CF{sub 4} plasma treatment on Si for sputtered HfO{sub 2} gate dielectrics are investigated. The significant fluorine was incorporated at the HfO{sub 2}/Si substrate interface for a sample with the CF{sub 4} plasma pretreatment. The Hf silicide was suppressed and Hf-F bonding was observed for the CF{sub 4} plasma pretreated sample. Compared with the as-deposited sample, the effective oxide thickness was much reduced for the pre-CF{sub 4} plasma treated sample due to the elimination of the interfacial layer between HfO{sub 2} and Si substrate. These improved characteristics of the HfO{sub 2} gate dielectrics can be explained in terms of the fluorine atoms blocking oxygen diffusion through the HfO{sub 2} film into the Si substrate.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.2337002