Molecular beam epitaxy of phase pure cubic InN

Cubic InN layers were grown by plasma assisted molecular beam epitaxy on 3 C - Si C (001) substrates at growth temperatures from 419 to 490 ° C . X-ray diffraction investigations show that the layers have zinc blende structure with only a small fraction of wurtzite phase inclusions on the (111) facets of the cubic layer. The full width at half maximum of the c - In N (002) x-ray rocking curve is less than 50 arc min . The lattice constant is 5.01 ± 0.01 Å . Low temperature photoluminescence measurements yield a c - In N band gap of 0.61 eV . At room temperature the band gap is about 0.56 eV and the free electron concentration is about n ∼ 1.7 × 10 19 cm − 3 .