Thermal stability of amorphous LaScO{sub 3} films on silicon

The thermal stability of amorphous LaScO{sub 3} thin films deposited by molecular-beam deposition directly on (001) Si was investigated by high-resolution transmission electron microscopy (HRTEM), transmission infrared absorption spectroscopy (IRAS), and x-ray diffraction (XRD). IRAS indicated that...

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Veröffentlicht in:	Applied physics letters 2006-08, Vol.89 (6)
Hauptverfasser:	Edge, L. F., Schlom, D. G., Rivillon, S., Chabal, Y. J., Agustin, M. P., Stemmer, S., Lee, T., Kim, M. J., Craft, H. S., Maria, J.-P., Hawley, M. E., Hollaender, B., Schubert, J., Eisenbeiser, K., Department of Chemistry and Chemical Biology, Rutgers University, Piscataway, New Jersey 08854, Materials Department, University of California, Santa Barbara, California 93106, Department of Electrical Engineering, University of Texas at Dallas, Richardson, Texas 75083-0688, Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27606, Materials Science and Technology Division, Los Alamos National Laboratory, Los Alamos, New Mexico 87545, Institut fuer Bio- und Nanosysteme, Motorola Physical Sciences Research Labs
Format:	Artikel
Sprache:	eng
Schlagworte:	ABSORPTION SPECTROSCOPY AMORPHOUS STATE ANNEALING CRYSTAL GROWTH DEPOSITION DIELECTRIC MATERIALS INFRARED SPECTRA LANTHANUM COMPOUNDS MATERIALS SCIENCE MOLECULAR BEAM EPITAXY SCANDIUM OXIDES SILICON SILICON OXIDES STABILITY TEMPERATURE DEPENDENCE TEMPERATURE RANGE 0400-1000 K TEMPERATURE RANGE 1000-4000 K THIN FILMS TRANSMISSION ELECTRON MICROSCOPY X-RAY DIFFRACTION
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Zusammenfassung:	The thermal stability of amorphous LaScO{sub 3} thin films deposited by molecular-beam deposition directly on (001) Si was investigated by high-resolution transmission electron microscopy (HRTEM), transmission infrared absorption spectroscopy (IRAS), and x-ray diffraction (XRD). IRAS indicated that the as-deposited films contained
ISSN:	0003-6951 1077-3118
DOI:	10.1063/1.2222302