Origin of ferromagnetism in semiconducting (In{sub 1-x-y}Fe{sub x}Cu{sub y}){sub 2}O{sub 3-{sigma}}
We systematically measure and analyze x-ray absorption fine structure and the anomalous Hall effect of recently discovered room-temperature ferromagnetic semiconductor thin films (In{sub 1-x-y}Fe{sub x}Cu{sub y}){sub 2}O{sub 3-{sigma}}. The x-ray fine structure demonstrates that divalent Fe ions exi...
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Veröffentlicht in: | Physical review. B, Condensed matter and materials physics Condensed matter and materials physics, 2006-10, Vol.74 (16) |
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Hauptverfasser: | , , , , , , , , , , |
Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | We systematically measure and analyze x-ray absorption fine structure and the anomalous Hall effect of recently discovered room-temperature ferromagnetic semiconductor thin films (In{sub 1-x-y}Fe{sub x}Cu{sub y}){sub 2}O{sub 3-{sigma}}. The x-ray fine structure demonstrates that divalent Fe ions exist in ferromagnetic samples but not in nonmagnetic ones, suggesting a mobile-electron-mediated ferromagnetism. The anomalous Hall behavior is found to be consistent with that of ferromagnets, in which carriers are delocalized, but qualitatively different from that of double-exchange manganites, in which carriers are bound to magnetic ions, confirming that the ferromagnetism in (In{sub 1-x-y}Fe{sub x}Cu{sub y}){sub 2}O{sub 3-{sigma}} is mediated by mobile electrons. |
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ISSN: | 1098-0121 1550-235X |
DOI: | 10.1103/PHYSREVB.74.165321 |