Origin of ferromagnetism in semiconducting (In{sub 1-x-y}Fe{sub x}Cu{sub y}){sub 2}O{sub 3-{sigma}}

We systematically measure and analyze x-ray absorption fine structure and the anomalous Hall effect of recently discovered room-temperature ferromagnetic semiconductor thin films (In{sub 1-x-y}Fe{sub x}Cu{sub y}){sub 2}O{sub 3-{sigma}}. The x-ray fine structure demonstrates that divalent Fe ions exi...

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Veröffentlicht in:Physical review. B, Condensed matter and materials physics Condensed matter and materials physics, 2006-10, Vol.74 (16)
Hauptverfasser: Yu, Z. G., He Jun, Xu Shifa, Xue Qizhen, Yoo, Young K., Cheng Shifan, Erve, O. M. J. van't, Jonker, B. T., Marcus, M. A., Xiang Xiaodong, Intematix Corporation, 46410 South Fremont Boulevard, Fremont, California 94538
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Sprache:eng
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Zusammenfassung:We systematically measure and analyze x-ray absorption fine structure and the anomalous Hall effect of recently discovered room-temperature ferromagnetic semiconductor thin films (In{sub 1-x-y}Fe{sub x}Cu{sub y}){sub 2}O{sub 3-{sigma}}. The x-ray fine structure demonstrates that divalent Fe ions exist in ferromagnetic samples but not in nonmagnetic ones, suggesting a mobile-electron-mediated ferromagnetism. The anomalous Hall behavior is found to be consistent with that of ferromagnets, in which carriers are delocalized, but qualitatively different from that of double-exchange manganites, in which carriers are bound to magnetic ions, confirming that the ferromagnetism in (In{sub 1-x-y}Fe{sub x}Cu{sub y}){sub 2}O{sub 3-{sigma}} is mediated by mobile electrons.
ISSN:1098-0121
1550-235X
DOI:10.1103/PHYSREVB.74.165321