Intrinsic ferromagnetism in wurtzite (Ga,Mn)N semiconductor

Intrinsic ferromagnetism in high quality wurtzite Ga0:937Mn0:063N semiconductor is unambigu- ously demonstrated by both macroscopic magnetization measurements and x-ray magnetic circular dichroism. The structural quality of the samples grown by plasma-assisted molecular beam epitaxy is confirmed by...

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Veröffentlicht in:	Physical review. B, Condensed matter and materials physics Condensed matter and materials physics, 2006-07, Vol.74 (4), Article 041306
Hauptverfasser:	Sarigiannidou, E., Wilhelm, F., Monroy, E., Galera, R. M., Bellet-Amalric, E., Rogalev, A., Goulon, J., Cibert, J., Mariette, H.
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed Matter CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY CURIE POINT FERROMAGNETIC MATERIALS FERROMAGNETISM GALLIUM NITRIDES MAGNETIC CIRCULAR DICHROISM MAGNETIC MOMENTS MAGNETIZATION MANGANESE NITRIDES Materials Science MOLECULAR BEAM EPITAXY Physics PLASMA PROCESSING SEMICONDUCTOR MATERIALS X RADIATION X-RAY DIFFRACTION
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Zusammenfassung:	Intrinsic ferromagnetism in high quality wurtzite Ga0:937Mn0:063N semiconductor is unambigu- ously demonstrated by both macroscopic magnetization measurements and x-ray magnetic circular dichroism. The structural quality of the samples grown by plasma-assisted molecular beam epitaxy is confirmed by x-ray di®raction and x-ray linear dichroism. The Curie temperature of a (Ga,Mn)N sample with 6.3 % Mn is 8 K with a spontaneous magnetic moment of 2.4 Bohr magneton per Mn at 2 K.
ISSN:	1098-0121 1550-235X
DOI:	10.1103/PhysRevB.74.041306