Nanoscale defect formation on InP (111) surfaces after MeV Sb implantation

We have studied the surface modifications as well as the surface roughness of the InP(111) surfaces after 1.5 MeV Sb ion implantations. A scanning probe microscope has been utilized to investigate the ion-implanted InP(111) surfaces. We observe the formation of nanoscale defect structures on the InP...

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Veröffentlicht in:Journal of applied physics 2006-01, Vol.99 (1), p.014304-014304-7
Hauptverfasser: Paramanik, Dipak, Pradhan, Asima, Varma, Shikha
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Pradhan, Asima
Varma, Shikha
description We have studied the surface modifications as well as the surface roughness of the InP(111) surfaces after 1.5 MeV Sb ion implantations. A scanning probe microscope has been utilized to investigate the ion-implanted InP(111) surfaces. We observe the formation of nanoscale defect structures on the InP surface. The density, height, and size of the nanostructures have been investigated here as a function of ion fluence. The rms surface roughness, of the ion implanted InP surfaces, has also been investigated. Raman-scattering results demonstrate that at the critical fluence, where the decrease in surface roughness occurs, the InP lattice becomes amorphous.
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subjects ANTIMONY IONS
CRYSTAL DEFECTS
INDIUM PHOSPHIDES
ION IMPLANTATION
MATERIALS SCIENCE
MEV RANGE 01-10
MICROSCOPES
NANOSTRUCTURES
RAMAN EFFECT
RAMAN SPECTRA
ROUGHNESS
SEMICONDUCTOR MATERIALS
SURFACE TREATMENTS
SURFACES
title Nanoscale defect formation on InP (111) surfaces after MeV Sb implantation
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