Effect of electron beam treatment on adhesion of Ta/polymeric low- k interface

Reliability of the Cu/low- k structure is a serious concern since the metal/dielectric interface is generally weak. The adhesion of the Ta/polyarylene ether interfaces with and without electron beam (EB) treatment was investigated by four-point bending test, x-ray photoelectron spectroscopy, and den...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Applied physics letters 2006-06, Vol.88 (23), p.233510-233510-3
Hauptverfasser: Gan, Zhenghao, Chen, Zhong, Mhaisalkar, S. G., Damayanti, M., Chen, Zhe, Prasad, K., Zhang, Sam, Ning, Jiang
Format: Artikel
Sprache:eng
Schlagworte:
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:Reliability of the Cu/low- k structure is a serious concern since the metal/dielectric interface is generally weak. The adhesion of the Ta/polyarylene ether interfaces with and without electron beam (EB) treatment was investigated by four-point bending test, x-ray photoelectron spectroscopy, and density functional theory. Higher adhesion energy ( G c ) was achieved with low-dose EB treatment, attributed to the strong Ta-arene interaction. However, high-dose EB breaks the aromatic rings partially, resulting in fewer available sites for Ta-arene bonding, leading to lower adhesion. It is suggested that the amount of carbon atoms involved in bonding with the metal is the key to improve the Ta/polymer adhesion.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.2212533