Superior electrical properties of crystalline Er{sub 2}O{sub 3} films epitaxially grown on Si substrates

Crystalline Er{sub 2}O{sub 3} thin films were epitaxially grown on Si (001) substrates. The dielectric constant of the film with an equivalent oxide thickness of 2.0 nm is 14.4. The leakage current density as small as 1.6x10{sup -4} A/cm{sup 2} at a reversed bias voltage of -1 V has been measured. Atomically sharp Er{sub 2}O{sub 3}/Si interface, superior electrical properties, and good time stability of the Er{sub 2}O{sub 3} thin film indicate that crystalline Er{sub 2}O{sub 3} thin film can be an ideal candidate of future electronic devices.