Generation of a boron ion beam in a modified ion source for semiconductor applications

Generation of a boron ion beam in a modified ion source for semiconductor applications

Presented here are results of experimental studies on the production of intense beams of boron ions using a modified Bernas–Calutron ion source. Instead of using the conventional boron–trifluoride gas, a solid lithium–boron–tetrafluoride compound was heated to release boron–trifluoride. For optimum...

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Veröffentlicht in:Review of scientific instruments 2006-03, Vol.77 (3)
Hauptverfasser: Gushenets, V. I., Bugaev, A. S., Oks, E. M., Yushkov, G. Yu, Hershcovitch, Ady, Johnson, B. M., Kulevoy, T. V., Poole, H. J., Swarovsky, A. Ya
Format: Artikel
Sprache:eng
Schlagworte:
BEAM CURRENTS
BORON
BORON FLUORIDES
BORON IONS
INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
ION BEAMS
ION IMPLANTATION
ION SOURCES
LITHIUM
SEMICONDUCTOR MATERIALS
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Beschreibung
Zusammenfassung:Presented here are results of experimental studies on the production of intense beams of boron ions using a modified Bernas–Calutron ion source. Instead of using the conventional boron–trifluoride gas, a solid lithium–boron–tetrafluoride compound was heated to release boron–trifluoride. For optimum ion source parameters the measured 25–41mA of total ion beam current was composed of 70% singly charged and about 1% doubly charged boron ions.
ISSN:0034-6748
1089-7623
DOI:10.1063/1.2164894