Synthesis of Cubic Boron Nitride Thin Films on Silicon Substrate Using Electron Beam Evaporation

This paper deals with the synthesis of cubic phase of boron nitride on Si (100) wafers using electron beam evaporator. Four sets of samples have been deposited by varying substrate temperature and the deposition time. Scanning Electron Microscopy (SEM), Energy Dispersive Spectroscopy (EDS), X-ray Photoelectron Spectroscopy (XPS), and Fourier Transform Infrared Spectroscopy (FTIR) techniques have been used to determine the structure and composition of the films deposited. It was found that deposition at substrate temperature of 400DGC and for a period of one hour yielded high quality cubic boron nitride films.