Capacitance-voltage characteristics of ZnO∕GaN heterostructures

We have investigated the electrical properties of ZnO∕GaN heterostructures by capacitance-voltage (C-V) measurements. ZnO∕GaN heterostructures are fabricated on Ga-polar GaN templates by plasma-assisted molecular-beam epitaxy. The ZnO∕GaN heterostructures exhibit a plateau region of 6.5V in the C-V...

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Veröffentlicht in:	Applied physics letters 2005-10, Vol.87 (16)
Hauptverfasser:	Oh, D. C., Suzuki, T., Kim, J. J., Makino, H., Hanada, T., Yao, T., Ko, H. J.
Format:	Artikel
Sprache:	eng
Schlagworte:	CAPACITANCE CRYSTAL GROWTH ELECTRIC POTENTIAL ELECTRON DENSITY GALLIUM NITRIDES HETEROJUNCTIONS INTERFACES KHZ RANGE 01-100 MATERIALS SCIENCE MOLECULAR BEAM EPITAXY PLASMA SEMICONDUCTOR MATERIALS TEMPERATURE RANGE 0273-0400 K TRANSISTORS ZINC OXIDES
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