Capacitance-voltage characteristics of ZnO∕GaN heterostructures

We have investigated the electrical properties of ZnO∕GaN heterostructures by capacitance-voltage (C-V) measurements. ZnO∕GaN heterostructures are fabricated on Ga-polar GaN templates by plasma-assisted molecular-beam epitaxy. The ZnO∕GaN heterostructures exhibit a plateau region of 6.5V in the C-V...

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Veröffentlicht in:Applied physics letters 2005-10, Vol.87 (16)
Hauptverfasser: Oh, D. C., Suzuki, T., Kim, J. J., Makino, H., Hanada, T., Yao, T., Ko, H. J.
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Sprache:eng
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Zusammenfassung:We have investigated the electrical properties of ZnO∕GaN heterostructures by capacitance-voltage (C-V) measurements. ZnO∕GaN heterostructures are fabricated on Ga-polar GaN templates by plasma-assisted molecular-beam epitaxy. The ZnO∕GaN heterostructures exhibit a plateau region of 6.5V in the C-V curves measured at 10kHz and room temperature. Moreover, it is found that a large electron density is accumulated at the interface of ZnO∕GaN, where the concentration approaches ∼1018cm−3. The distinct C-V characteristics are ascribed to large conduction-band discontinuity at the ZnO∕GaN heterointerface. It is suggested that the ZnO∕GaN heterostructure is a very promising material for the application to heterojunction transistors.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.2108107