Capacitance-voltage characteristics of ZnO∕GaN heterostructures
We have investigated the electrical properties of ZnO∕GaN heterostructures by capacitance-voltage (C-V) measurements. ZnO∕GaN heterostructures are fabricated on Ga-polar GaN templates by plasma-assisted molecular-beam epitaxy. The ZnO∕GaN heterostructures exhibit a plateau region of 6.5V in the C-V...
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Veröffentlicht in: | Applied physics letters 2005-10, Vol.87 (16) |
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Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | We have investigated the electrical properties of ZnO∕GaN heterostructures by capacitance-voltage (C-V) measurements. ZnO∕GaN heterostructures are fabricated on Ga-polar GaN templates by plasma-assisted molecular-beam epitaxy. The ZnO∕GaN heterostructures exhibit a plateau region of 6.5V in the C-V curves measured at 10kHz and room temperature. Moreover, it is found that a large electron density is accumulated at the interface of ZnO∕GaN, where the concentration approaches ∼1018cm−3. The distinct C-V characteristics are ascribed to large conduction-band discontinuity at the ZnO∕GaN heterointerface. It is suggested that the ZnO∕GaN heterostructure is a very promising material for the application to heterojunction transistors. |
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ISSN: | 0003-6951 1077-3118 |
DOI: | 10.1063/1.2108107 |