Ion-beam texturing of uniaxially textured Ni films
The formation of biaxial texture in uniaxially textured Ni thin films via Ar-ion irradiation is reported. The ion-beam irradiation was not simultaneous with deposition. Instead, the ion beam irradiates the uniaxially textured film surface with no impinging deposition flux, which differs from convent...
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Veröffentlicht in: | Applied physics letters 2005-07, Vol.87 (3), p.031907-031907-3 |
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container_title | Applied physics letters |
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creator | Park, S. J. Norton, D. P. Selvamanickam, Venkat |
description | The formation of biaxial texture in uniaxially textured Ni thin films via Ar-ion irradiation is reported. The ion-beam irradiation was not simultaneous with deposition. Instead, the ion beam irradiates the uniaxially textured film surface with no impinging deposition flux, which differs from conventional ion-beam-assisted deposition. The uniaxial texture is established via a nonion beam process, with the in-plane texture imposed on the uniaxial film via ion beam bombardment. Within this sequential ion beam texturing method, grain alignment is driven by selective etching and grain overgrowth. |
doi_str_mv | 10.1063/1.1957121 |
format | Article |
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J. ; Norton, D. P. ; Selvamanickam, Venkat</creator><creatorcontrib>Park, S. J. ; Norton, D. P. ; Selvamanickam, Venkat</creatorcontrib><description>The formation of biaxial texture in uniaxially textured Ni thin films via Ar-ion irradiation is reported. The ion-beam irradiation was not simultaneous with deposition. Instead, the ion beam irradiates the uniaxially textured film surface with no impinging deposition flux, which differs from conventional ion-beam-assisted deposition. The uniaxial texture is established via a nonion beam process, with the in-plane texture imposed on the uniaxial film via ion beam bombardment. Within this sequential ion beam texturing method, grain alignment is driven by selective etching and grain overgrowth.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.1957121</identifier><identifier>CODEN: APPLAB</identifier><language>eng</language><publisher>United States: American Institute of Physics</publisher><subject>ARGON IONS ; DEPOSITION ; ETCHING ; GRAIN GROWTH ; ION BEAMS ; ION IMPLANTATION ; IRRADIATION ; MATERIALS SCIENCE ; NICKEL ; TEXTURE ; THIN FILMS</subject><ispartof>Applied physics letters, 2005-07, Vol.87 (3), p.031907-031907-3</ispartof><rights>2005 American Institute of Physics</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c312t-49fb1ab6869b196d4908aba115887e237489e1ce2bc54241199f549b95674d073</citedby><cites>FETCH-LOGICAL-c312t-49fb1ab6869b196d4908aba115887e237489e1ce2bc54241199f549b95674d073</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://pubs.aip.org/apl/article-lookup/doi/10.1063/1.1957121$$EHTML$$P50$$Gscitation$$H</linktohtml><link.rule.ids>230,314,776,780,790,881,1553,4498,27901,27902,76127,76133</link.rule.ids><backlink>$$Uhttps://www.osti.gov/biblio/20702580$$D View this record in Osti.gov$$Hfree_for_read</backlink></links><search><creatorcontrib>Park, S. J.</creatorcontrib><creatorcontrib>Norton, D. P.</creatorcontrib><creatorcontrib>Selvamanickam, Venkat</creatorcontrib><title>Ion-beam texturing of uniaxially textured Ni films</title><title>Applied physics letters</title><description>The formation of biaxial texture in uniaxially textured Ni thin films via Ar-ion irradiation is reported. The ion-beam irradiation was not simultaneous with deposition. Instead, the ion beam irradiates the uniaxially textured film surface with no impinging deposition flux, which differs from conventional ion-beam-assisted deposition. The uniaxial texture is established via a nonion beam process, with the in-plane texture imposed on the uniaxial film via ion beam bombardment. Within this sequential ion beam texturing method, grain alignment is driven by selective etching and grain overgrowth.</description><subject>ARGON IONS</subject><subject>DEPOSITION</subject><subject>ETCHING</subject><subject>GRAIN GROWTH</subject><subject>ION BEAMS</subject><subject>ION IMPLANTATION</subject><subject>IRRADIATION</subject><subject>MATERIALS SCIENCE</subject><subject>NICKEL</subject><subject>TEXTURE</subject><subject>THIN FILMS</subject><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2005</creationdate><recordtype>article</recordtype><recordid>eNp1kEtLAzEYRYMoWKsL_8GAKxep-fKYJBtBio9C0Y2uQ5LJaGQ6kUkK7b93Sgd3ri73criLg9A1kAWQmt3BArSQQOEEzYBIiRmAOkUzQgjDtRZwji5y_h6roIzNEF2lHrtgN1UJu7IdYv9Zpbba9tHuou26_bSHpnqNVRu7Tb5EZ63tcriaco4-nh7fly94_fa8Wj6ssWdAC-a6dWBdrWrtQNcN10RZZwGEUjJQJrnSAXygzgtOOYDWreDaaVFL3hDJ5ujm-JtyiSb7WIL_8qnvgy-GEkmoUGSkbo-UH1LOQ2jNzxA3dtgbIOagxICZlIzs_ZE9nNkSU_8_PHoxBy_mz4tJ7BdEKWY2</recordid><startdate>20050718</startdate><enddate>20050718</enddate><creator>Park, S. J.</creator><creator>Norton, D. P.</creator><creator>Selvamanickam, Venkat</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope><scope>OTOTI</scope></search><sort><creationdate>20050718</creationdate><title>Ion-beam texturing of uniaxially textured Ni films</title><author>Park, S. J. ; Norton, D. P. ; Selvamanickam, Venkat</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c312t-49fb1ab6869b196d4908aba115887e237489e1ce2bc54241199f549b95674d073</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2005</creationdate><topic>ARGON IONS</topic><topic>DEPOSITION</topic><topic>ETCHING</topic><topic>GRAIN GROWTH</topic><topic>ION BEAMS</topic><topic>ION IMPLANTATION</topic><topic>IRRADIATION</topic><topic>MATERIALS SCIENCE</topic><topic>NICKEL</topic><topic>TEXTURE</topic><topic>THIN FILMS</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Park, S. J.</creatorcontrib><creatorcontrib>Norton, D. P.</creatorcontrib><creatorcontrib>Selvamanickam, Venkat</creatorcontrib><collection>CrossRef</collection><collection>OSTI.GOV</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Park, S. J.</au><au>Norton, D. P.</au><au>Selvamanickam, Venkat</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Ion-beam texturing of uniaxially textured Ni films</atitle><jtitle>Applied physics letters</jtitle><date>2005-07-18</date><risdate>2005</risdate><volume>87</volume><issue>3</issue><spage>031907</spage><epage>031907-3</epage><pages>031907-031907-3</pages><issn>0003-6951</issn><eissn>1077-3118</eissn><coden>APPLAB</coden><abstract>The formation of biaxial texture in uniaxially textured Ni thin films via Ar-ion irradiation is reported. The ion-beam irradiation was not simultaneous with deposition. Instead, the ion beam irradiates the uniaxially textured film surface with no impinging deposition flux, which differs from conventional ion-beam-assisted deposition. The uniaxial texture is established via a nonion beam process, with the in-plane texture imposed on the uniaxial film via ion beam bombardment. Within this sequential ion beam texturing method, grain alignment is driven by selective etching and grain overgrowth.</abstract><cop>United States</cop><pub>American Institute of Physics</pub><doi>10.1063/1.1957121</doi></addata></record> |
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source | AIP Journals Complete; AIP Digital Archive |
subjects | ARGON IONS DEPOSITION ETCHING GRAIN GROWTH ION BEAMS ION IMPLANTATION IRRADIATION MATERIALS SCIENCE NICKEL TEXTURE THIN FILMS |
title | Ion-beam texturing of uniaxially textured Ni films |
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