Effects of postgrowth rapid thermal annealing on InAlAs∕InGaAs metamorphic high-electron-mobility transistor grown on a compositionally graded InAlAs∕InGaAlAs buffer

Effects of postgrowth rapid thermal annealing on InAlAs∕InGaAs metamorphic high-electron-mobility transistor grown on a compositionally graded InAlAs∕InGaAlAs buffer

Effects of postgrowth rapid thermal annealing (RTA) on structural and electrical properties of an In0.52Al0.48As∕In0.52Ga0.48As metamorphic high-electron-mobility transistor (MHEMT) structure grown on a GaAs substrate utilizing a compositionally graded InAlAs∕InGaAlAs buffer layer were investigated....

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Veröffentlicht in:Applied physics letters 2005-07, Vol.87 (4)
Hauptverfasser: Ihn, Soo-Ghang, Jo, Seong-June, Song, Jong-In
Format: Artikel
Sprache:eng
Schlagworte:
ALUMINIUM COMPOUNDS
ANNEALING
BUFFERS
ELECTRICAL PROPERTIES
ELECTRON MOBILITY
GALLIUM ARSENIDES
HALL EFFECT
IMPURITIES
INDIUM COMPOUNDS
LAYERS
MATERIALS SCIENCE
PHOTOLUMINESCENCE
SEMICONDUCTOR MATERIALS
SUBSTRATES
TRANSISTORS
X-RAY DIFFRACTION
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Zusammenfassung:Effects of postgrowth rapid thermal annealing (RTA) on structural and electrical properties of an In0.52Al0.48As∕In0.52Ga0.48As metamorphic high-electron-mobility transistor (MHEMT) structure grown on a GaAs substrate utilizing a compositionally graded InAlAs∕InGaAlAs buffer layer were investigated. High-resolution triple-axis x-ray diffraction, photoluminescence, and van der Pauw–Hall measurements were used for the investigation. While the RTA improved the structural property of the MHEMT, it degraded the channel mobility of the MHEMT due to defect-assisted impurity redistribution.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.1988983