Low-temperature growth of high-quality lead zirconate titanate thin films by 28 GHz microwave irradiation
Pb ( Zr x Ti 1 − x ) O 3 (PZT) thin films were coated on Pt/Ti/SiO2/Si substrates by a sol-gel method and then crystallized by 28 GHz microwave irradiation. The elevated temperature generated by microwave irradiation to obtain the perovskite phase is only 480 °C, which is significantly lower than th...
Gespeichert in:
Veröffentlicht in: | Applied physics letters 2005-05, Vol.86 (21) |
---|---|
Hauptverfasser: | , , , , |
Format: | Artikel |
Sprache: | eng |
Schlagworte: | |
Online-Zugang: | Volltext |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
Zusammenfassung: | Pb ( Zr x Ti 1 − x ) O 3 (PZT) thin films were coated on Pt/Ti/SiO2/Si substrates by a sol-gel method and then crystallized by 28 GHz microwave irradiation. The elevated temperature generated by microwave irradiation to obtain the perovskite phase is only 480 °C, which is significantly lower than that of conventional thermal processing. X-ray diffraction analysis indicated that the PZT films crystallized well in the perovskite phase. A scanning electron microscopy image showed that the film has a spherulite grain structure and most of the grains are approximately 2 μm in size. The average values of the remanent polarization, coercive field, dielectric constant, and loss of the PZT films are 40μC∕cm2, 50 kV/cm, 1100, and 004, respectively. It is clear that microwave irradiation is effective for obtaining well-crystallized PZT films with good properties at low temperatures. |
---|---|
ISSN: | 0003-6951 1077-3118 |
DOI: | 10.1063/1.1935748 |