Observation of ultrahigh quality factor in a semiconductor microcavity
Observation of a very high-quality factor ( Q ) of ∼ 30,000 is reported for a planar semiconductor microcavity grown by molecular-beam epitaxy using in situ optical monitoring. The very high Q s are measured in pillars of 5 - 10 μ m diameter, and are approximately a factor of 3 higher than measured...
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Veröffentlicht in: | Applied physics letters 2005-05, Vol.86 (19), p.191109-191109-3 |
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Hauptverfasser: | , , , , , , |
Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | Observation of a very high-quality factor
(
Q
)
of
∼
30,000
is reported for a planar semiconductor microcavity grown by molecular-beam epitaxy using
in situ
optical monitoring. The very high
Q
s
are measured in pillars of
5
-
10
μ
m
diameter, and are approximately a factor of 3 higher than measured in planar structures before etching. The higher values in the pillars are ascribed to the elimination of the effects of in-plane dispersion, diffraction, and lateral inhomogeneities, thus allowing the intrinsic
Q
of the planar structure to be observed. Spectrally resolved mode mapping is reported, accounting qualitatively for the decrease of
Q
with increasing mode number in the pillars. |
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ISSN: | 0003-6951 1077-3118 |
DOI: | 10.1063/1.1925774 |