Observation of ultrahigh quality factor in a semiconductor microcavity

Observation of a very high-quality factor ( Q ) of ∼ 30,000 is reported for a planar semiconductor microcavity grown by molecular-beam epitaxy using in situ optical monitoring. The very high Q s are measured in pillars of 5 - 10 μ m diameter, and are approximately a factor of 3 higher than measured...

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Veröffentlicht in:Applied physics letters 2005-05, Vol.86 (19), p.191109-191109-3
Hauptverfasser: Sanvitto, D., Daraei, A., Tahraoui, A., Hopkinson, M., Fry, P. W., Whittaker, D. M., Skolnick, M. S.
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Sprache:eng
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Zusammenfassung:Observation of a very high-quality factor ( Q ) of ∼ 30,000 is reported for a planar semiconductor microcavity grown by molecular-beam epitaxy using in situ optical monitoring. The very high Q s are measured in pillars of 5 - 10 μ m diameter, and are approximately a factor of 3 higher than measured in planar structures before etching. The higher values in the pillars are ascribed to the elimination of the effects of in-plane dispersion, diffraction, and lateral inhomogeneities, thus allowing the intrinsic Q of the planar structure to be observed. Spectrally resolved mode mapping is reported, accounting qualitatively for the decrease of Q with increasing mode number in the pillars.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.1925774