In situ diffraction studies of the initial growth processes of textured icosahedral quasicrystalline thin films
The seeding and morphology of quasicrystalline Ti{sub x}Ni{sub y}Zr{sub 1-x-y} thin films grown by pulsed-laser deposition on Al{sub 2}O{sub 3}(0001) have been investigated in situ, using in-plane x-ray diffraction and reflectivity with synchrotron radiation. The crystallinity of the final films was...
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Veröffentlicht in: | Physical review. B, Condensed matter and materials physics Condensed matter and materials physics, 2005-03, Vol.71 (9), p.094203.1-094203.5, Article 094203 |
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Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | The seeding and morphology of quasicrystalline Ti{sub x}Ni{sub y}Zr{sub 1-x-y} thin films grown by pulsed-laser deposition on Al{sub 2}O{sub 3}(0001) have been investigated in situ, using in-plane x-ray diffraction and reflectivity with synchrotron radiation. The crystallinity of the final films was further studied ex situ using a laboratory x-ray source. Local icosahedral order becomes established after a film thickness of 1.5 nm, which is followed by an abrupt change in the growth rate after a film thickness of approximately 5 nm, as long-range quasicrystalline order begins to become energetically favorable. The films grow two-dimensionally even up to thicknesses of over 100 nm and are highly textured, consisting of columnar grains with one of their fivefold symmetry axes perpendicular to the substrate surface. |
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ISSN: | 1098-0121 1550-235X |
DOI: | 10.1103/PhysRevB.71.094203 |