Direct evidence of nanocluster-induced luminescence in InGaN epifilms

x-ray diffraction, scanning electron microscopy, energy dispersive x-ray spectrometry, and cathodoluminescence measurements have been employed to study the correlation between optical and structural properties in InGaN epitaxial films. In-rich quantum dots were found to be dispersed throughout the f...

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Veröffentlicht in:Applied physics letters 2005-01, Vol.86 (2), p.021911-021911-3
Hauptverfasser: Chang, H. J., Chen, C. H., Chen, Y. F., Lin, T. Y., Chen, L. C., Chen, K. H., Lan, Z. H.
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Sprache:eng
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Zusammenfassung:x-ray diffraction, scanning electron microscopy, energy dispersive x-ray spectrometry, and cathodoluminescence measurements have been employed to study the correlation between optical and structural properties in InGaN epitaxial films. In-rich quantum dots were found to be dispersed throughout the film. By the combination of these measurements, we clearly identify that brighter luminescence arises from In-rich regions while dimmer luminescence corresponds to the Ga-rich matrix regions.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.1843279