Direct evidence of nanocluster-induced luminescence in InGaN epifilms
x-ray diffraction, scanning electron microscopy, energy dispersive x-ray spectrometry, and cathodoluminescence measurements have been employed to study the correlation between optical and structural properties in InGaN epitaxial films. In-rich quantum dots were found to be dispersed throughout the f...
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Veröffentlicht in: | Applied physics letters 2005-01, Vol.86 (2), p.021911-021911-3 |
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Hauptverfasser: | , , , , , , |
Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | x-ray diffraction, scanning electron microscopy, energy dispersive x-ray spectrometry, and cathodoluminescence measurements have been employed to study the correlation between optical and structural properties in InGaN epitaxial films. In-rich quantum dots were found to be dispersed throughout the film. By the combination of these measurements, we clearly identify that brighter luminescence arises from In-rich regions while dimmer luminescence corresponds to the Ga-rich matrix regions. |
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ISSN: | 0003-6951 1077-3118 |
DOI: | 10.1063/1.1843279 |