Thermal distributions of surface states causing the current collapse in unpassivated AlGaN ∕ GaN heterostructure field-effect transistors
The dc characteristics of the AlGaN ∕ GaN heterostructure field-effect transistors were examined at temperatures ranging from 25 to 260°C under white light illumination. Drain current collapse measured was defined by the difference of drain current between light on and light off at V gs = 1 V and V...
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| Veröffentlicht in: | Applied physics letters 2005-01, Vol.86 (1), p.012106-012106-3 |
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| container_end_page | 012106-3 |
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| container_issue | 1 |
| container_start_page | 012106 |
| container_title | Applied physics letters |
| container_volume | 86 |
| creator | Oh, C. S. Youn, C. J. Yang, G. M. Lim, K. Y. Yang, J. W. |
| description | The dc characteristics of the
AlGaN
∕
GaN
heterostructure field-effect transistors were examined at temperatures ranging from 25 to 260°C under white light illumination. Drain current collapse measured was defined by the difference of drain current between light on and light off at
V
gs
=
1
V
and
V
ds
=
5
V
. The surface-passivated device showed no drain current collapse, but the unpassivated device showed severe drain current collapse at 25°C. Drain current and drain current collapse with an increase in temperature reduced, which resulted from the reduction of the electron mobility or saturation velocity and the thermal activation of the trapped electrons, respectively. Eventually, drain current collapse disappeared completely above 250°C. The behavior of the temperature-dependent drain current collapse showed that the surface states for trapping electrons were continuously distributed with the temperature not having specific energy states. |
| doi_str_mv | 10.1063/1.1844610 |
| format | Article |
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AlGaN
∕
GaN
heterostructure field-effect transistors were examined at temperatures ranging from 25 to 260°C under white light illumination. Drain current collapse measured was defined by the difference of drain current between light on and light off at
V
gs
=
1
V
and
V
ds
=
5
V
. The surface-passivated device showed no drain current collapse, but the unpassivated device showed severe drain current collapse at 25°C. Drain current and drain current collapse with an increase in temperature reduced, which resulted from the reduction of the electron mobility or saturation velocity and the thermal activation of the trapped electrons, respectively. Eventually, drain current collapse disappeared completely above 250°C. The behavior of the temperature-dependent drain current collapse showed that the surface states for trapping electrons were continuously distributed with the temperature not having specific energy states.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.1844610</identifier><identifier>CODEN: APPLAB</identifier><language>eng</language><publisher>United States: American Institute of Physics</publisher><subject>ALUMINIUM COMPOUNDS ; ELECTRON MOBILITY ; FIELD EFFECT TRANSISTORS ; GALLIUM NITRIDES ; ILLUMINANCE ; MATERIALS SCIENCE ; PASSIVATION ; PHYSICAL RADIATION EFFECTS ; SEMICONDUCTOR MATERIALS ; SURFACES ; TEMPERATURE DEPENDENCE ; TEMPERATURE RANGE 0273-0400 K ; TEMPERATURE RANGE 0400-1000 K ; THIN FILMS ; TRAPPED ELECTRONS ; TRAPPING ; TRAPS ; VISIBLE RADIATION</subject><ispartof>Applied physics letters, 2005-01, Vol.86 (1), p.012106-012106-3</ispartof><rights>2005 American Institute of Physics</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c378t-8662fb2cbe543e38cb2de9d61b2d6d060dee999bbc9ce2114de01b25ac038c0c3</citedby><cites>FETCH-LOGICAL-c378t-8662fb2cbe543e38cb2de9d61b2d6d060dee999bbc9ce2114de01b25ac038c0c3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://pubs.aip.org/apl/article-lookup/doi/10.1063/1.1844610$$EHTML$$P50$$Gscitation$$H</linktohtml><link.rule.ids>230,314,780,784,794,885,1558,4510,27923,27924,76155,76161</link.rule.ids><backlink>$$Uhttps://www.osti.gov/biblio/20636807$$D View this record in Osti.gov$$Hfree_for_read</backlink></links><search><creatorcontrib>Oh, C. S.</creatorcontrib><creatorcontrib>Youn, C. J.</creatorcontrib><creatorcontrib>Yang, G. M.</creatorcontrib><creatorcontrib>Lim, K. Y.</creatorcontrib><creatorcontrib>Yang, J. W.</creatorcontrib><title>Thermal distributions of surface states causing the current collapse in unpassivated AlGaN ∕ GaN heterostructure field-effect transistors</title><title>Applied physics letters</title><description>The dc characteristics of the
AlGaN
∕
GaN
heterostructure field-effect transistors were examined at temperatures ranging from 25 to 260°C under white light illumination. Drain current collapse measured was defined by the difference of drain current between light on and light off at
V
gs
=
1
V
and
V
ds
=
5
V
. The surface-passivated device showed no drain current collapse, but the unpassivated device showed severe drain current collapse at 25°C. Drain current and drain current collapse with an increase in temperature reduced, which resulted from the reduction of the electron mobility or saturation velocity and the thermal activation of the trapped electrons, respectively. Eventually, drain current collapse disappeared completely above 250°C. The behavior of the temperature-dependent drain current collapse showed that the surface states for trapping electrons were continuously distributed with the temperature not having specific energy states.</description><subject>ALUMINIUM COMPOUNDS</subject><subject>ELECTRON MOBILITY</subject><subject>FIELD EFFECT TRANSISTORS</subject><subject>GALLIUM NITRIDES</subject><subject>ILLUMINANCE</subject><subject>MATERIALS SCIENCE</subject><subject>PASSIVATION</subject><subject>PHYSICAL RADIATION EFFECTS</subject><subject>SEMICONDUCTOR MATERIALS</subject><subject>SURFACES</subject><subject>TEMPERATURE DEPENDENCE</subject><subject>TEMPERATURE RANGE 0273-0400 K</subject><subject>TEMPERATURE RANGE 0400-1000 K</subject><subject>THIN FILMS</subject><subject>TRAPPED ELECTRONS</subject><subject>TRAPPING</subject><subject>TRAPS</subject><subject>VISIBLE RADIATION</subject><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2005</creationdate><recordtype>article</recordtype><recordid>eNp1kEFLwzAYhoMoOKcH_0HAk4fOpGmz9iKMoVMYepnnkn75aiNdOpJU8B8Inv2D_hJTtoMXTy8feXjz8hByydmMMylu-IwXWSY5OyITzubzRHBeHJMJY0wkssz5KTnz_i2eeSrEhHxtWnRb1VFtfHCmHoLprad9Q_3gGgVIfVABPQU1eGNfaWiRwuAc2kCh7zq180iNpYPdKe_Ne4Q1XXQr9UR_Pr_pmC0GdH2sHyAMDmljsNMJNg1CoMEp6-PfvfPn5KRRnceLQ07Jy_3dZvmQrJ9Xj8vFOgExL0JSSJk2dQo15plAUUCdaiy15DGlZpJpxLIs6xpKwJTzTCOLb7kCFmEGYkqu9r1xk6k8mIDQQm9t3FOl0aIs2DxS13sK4nbvsKl2zmyV-6g4q0bXFa8OriN7u2fHMjUq_B8-CK_-Che_S7-LQw</recordid><startdate>20050103</startdate><enddate>20050103</enddate><creator>Oh, C. S.</creator><creator>Youn, C. J.</creator><creator>Yang, G. M.</creator><creator>Lim, K. Y.</creator><creator>Yang, J. W.</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope><scope>OTOTI</scope></search><sort><creationdate>20050103</creationdate><title>Thermal distributions of surface states causing the current collapse in unpassivated AlGaN ∕ GaN heterostructure field-effect transistors</title><author>Oh, C. S. ; Youn, C. J. ; Yang, G. M. ; Lim, K. Y. ; Yang, J. W.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c378t-8662fb2cbe543e38cb2de9d61b2d6d060dee999bbc9ce2114de01b25ac038c0c3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2005</creationdate><topic>ALUMINIUM COMPOUNDS</topic><topic>ELECTRON MOBILITY</topic><topic>FIELD EFFECT TRANSISTORS</topic><topic>GALLIUM NITRIDES</topic><topic>ILLUMINANCE</topic><topic>MATERIALS SCIENCE</topic><topic>PASSIVATION</topic><topic>PHYSICAL RADIATION EFFECTS</topic><topic>SEMICONDUCTOR MATERIALS</topic><topic>SURFACES</topic><topic>TEMPERATURE DEPENDENCE</topic><topic>TEMPERATURE RANGE 0273-0400 K</topic><topic>TEMPERATURE RANGE 0400-1000 K</topic><topic>THIN FILMS</topic><topic>TRAPPED ELECTRONS</topic><topic>TRAPPING</topic><topic>TRAPS</topic><topic>VISIBLE RADIATION</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Oh, C. S.</creatorcontrib><creatorcontrib>Youn, C. J.</creatorcontrib><creatorcontrib>Yang, G. M.</creatorcontrib><creatorcontrib>Lim, K. Y.</creatorcontrib><creatorcontrib>Yang, J. W.</creatorcontrib><collection>CrossRef</collection><collection>OSTI.GOV</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Oh, C. S.</au><au>Youn, C. J.</au><au>Yang, G. M.</au><au>Lim, K. Y.</au><au>Yang, J. W.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Thermal distributions of surface states causing the current collapse in unpassivated AlGaN ∕ GaN heterostructure field-effect transistors</atitle><jtitle>Applied physics letters</jtitle><date>2005-01-03</date><risdate>2005</risdate><volume>86</volume><issue>1</issue><spage>012106</spage><epage>012106-3</epage><pages>012106-012106-3</pages><issn>0003-6951</issn><eissn>1077-3118</eissn><coden>APPLAB</coden><abstract>The dc characteristics of the
AlGaN
∕
GaN
heterostructure field-effect transistors were examined at temperatures ranging from 25 to 260°C under white light illumination. Drain current collapse measured was defined by the difference of drain current between light on and light off at
V
gs
=
1
V
and
V
ds
=
5
V
. The surface-passivated device showed no drain current collapse, but the unpassivated device showed severe drain current collapse at 25°C. Drain current and drain current collapse with an increase in temperature reduced, which resulted from the reduction of the electron mobility or saturation velocity and the thermal activation of the trapped electrons, respectively. Eventually, drain current collapse disappeared completely above 250°C. The behavior of the temperature-dependent drain current collapse showed that the surface states for trapping electrons were continuously distributed with the temperature not having specific energy states.</abstract><cop>United States</cop><pub>American Institute of Physics</pub><doi>10.1063/1.1844610</doi></addata></record> |
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| identifier | ISSN: 0003-6951 |
| ispartof | Applied physics letters, 2005-01, Vol.86 (1), p.012106-012106-3 |
| issn | 0003-6951 1077-3118 |
| language | eng |
| recordid | cdi_osti_scitechconnect_20636807 |
| source | AIP Journals Complete; AIP Digital Archive |
| subjects | ALUMINIUM COMPOUNDS ELECTRON MOBILITY FIELD EFFECT TRANSISTORS GALLIUM NITRIDES ILLUMINANCE MATERIALS SCIENCE PASSIVATION PHYSICAL RADIATION EFFECTS SEMICONDUCTOR MATERIALS SURFACES TEMPERATURE DEPENDENCE TEMPERATURE RANGE 0273-0400 K TEMPERATURE RANGE 0400-1000 K THIN FILMS TRAPPED ELECTRONS TRAPPING TRAPS VISIBLE RADIATION |
| title | Thermal distributions of surface states causing the current collapse in unpassivated AlGaN ∕ GaN heterostructure field-effect transistors |
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